Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Optical and Electrical Properties of Polycrystalline Gan Films Prepared by Post-Nitridation Technique

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Electrical Properties of Nanocrystalline Gan Film Prepared by Magnetron Sputtering

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Optical properties of GaN film grown by metalorganic chemical vapor deposition

Optical Properties of A-Gan Film Deposited by Dc Magnetron Sputtering

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Epitaxial Gan Thin Films Prepared by Polymer-Assisted Deposition

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Optical properties of nanocrystalline GaN films prepared by DC magnetron sputtering

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition