Thermal Analysis and Optimization of Power VDMOS Transistor Based on ANSYS

华庆,殷景华,焦国芹,刘晓为
DOI: https://doi.org/10.3969/j.issn.1005-9490.2009.02.030
2009-01-01
Abstract:Based on finite element method,a three-dimensional model is established for power VDMOS transistor whose package type is TO-220AB.Under the condition of power-dissipation,the temperature field of device is simulated and analyzed.The effects of substrate thickness,adhesive layer material and layer thickness on temperature distribution are studied.The results show that the main heat dissipation path is from chip to substrate,the prime thickness range of substrate is 1~1.2 mm,the bigger the heat conductivity coefficient of adhesive layer and the thinner the layer thickness,the better the dissipation effect will be.
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