Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Contrasting Growth Modes of Mn on Ge(100) and Ge(111) Surfaces: Subsurface Segregation Versus Intermixing

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Surface Driven Mn-Doping of Ge Quantum Dots - Mn-Interaction with the Ge QD{105} Facet and the Wetting Layer

Initial Stages of Mn Adsorption on Ge(111)

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Dopant Stability and Strain States in Co and Mn-Doped Ge (001) Epitaxial Films

Dopant-assisted Concentration Enhancement of Substitutional Mn in Si and Ge.

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

Combinatorial Synthesis and Characterization of a Ternary Epitaxial Film of Co and Mn Doped Ge (001)

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

The difference between Si and Ge(001) surfaces in the initial stages of growth

Dopant Segregation and Giant Magnetoresistance in Manganese-Doped Germanium

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Homoepitaxial Mn3Ge films on ultra-thin Fe seed layer with high perpendicular magnetic anisotropy

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Electronic and Magnetic Properties of Eutectoid Growth Mn-rich Ge1-xMnx Dilute Magnetic Semiconductors

Thin films MnGe grown on Si(111)