Abstract:SiO2 is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO2 insulation layer. In this study, we deposited high-quality SiO2 insulation films at 60 °C using inductively coupled plasma-chemical vapor deposition (ICP-CVD) to fulfill these requirements and fabricate JVS chips simultaneously. SiO2 films have a high density, low compressive stress, and a sloped sidewall profile over the vertical junction steps. The sidewall profiles over the vertical junction steps can be adjusted by changing the radio frequency (RF) power, ICP power, and chamber pressure. The effects of sputtering etch and sloped step coverage were enhanced when the RF power was increased. The anisotropy ratio of the deposition rate between the sidewall and the bottom of the film was lower, and the sloped step coverage effect was enhanced when the ICP power was increased, or the deposition pressure was decreased. The effects of the RF power on the stress, density, roughness, and breakdown voltage of the SiO2 films were also investigated. Despite increased compressive stress with increasing RF power, the film stress was still low and within acceptable limits in the device. The films deposited under optimized conditions exhibited improved densities in the Fourier transform infrared spectra, buffered oxide etch rate, and breakdown voltage measurements compared with the films deposited without RF power. The roughness of the film also decreased. The step-coverage profile of the insulation layer prepared under optimized conditions was enhanced in the junction and bottom electrode regions; additionally, the performance of the device was optimized. This study holds immense significance for increasing the number of junctions in future devices.

Silicon Dioxide Film Deposited by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Properties of plasma-deposited amorphous SiO2 films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Low-Temperature Deposition of High-Quality SiO2 Films with a Sloped Sidewall Profile for Vertical Step Coverage

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film