Synergistic strain and N-doping for creating physical orientation selectivity in chemical etching of graphene nanoribbons
Xiangyu Meng,Yuansen Zhu,Ying Li,Chengqian Huang,Shiming Zhou,Kuibo Yin,Liang Ma,Jinlan Wang,Yueming Sun,Yunqian Dai
DOI: https://doi.org/10.1039/d4ta05960c
IF: 11.9
2024-12-12
Journal of Materials Chemistry A
Abstract:The controlled synthesis of graphene nanoribbons (GNRs) necessitates precise selectivity in physical orientation during the etching process. However, traditional chemical selectivity methods struggle to etch graphene due to its symmetrical structure and uniform chemical bonds, which result in no differences in reaction pathways or products. We introduce an innovative method that overcomes these limitations by combining physical stress with nitrogen doping, thereby creating new chemical selectivity for orientated etching. This precise synthesis method produces GNRs with adjustable widths ranging from 103 to 16 nm and controlled zigzag edges precisely decorated with peripheral N-dopants. Along cylinder container, spontaneously self-bending of graphene oxide sheet in ammonia medium can induce strain on carbon matrix. This strain stretches the C−C bonds and rearranges epoxy-pair chains on the carbon skeleton, directing the graphene oxide etching perpendicular to the strain with the aid of N-aligning, resulting in the production of GNRs. By simply regulating bending strain, we obtained a series of zigzag GNRs with tailorable widths and peripheral N-dopant concentrations. This approach provides a powerful toolbox for fine-tuning the orientated etching geometric features and their electrical, chemistry reactivities from two-dimensional materials (e.g., superior performance of GNRs in electrocatalytic oxygen reduction reactions demonstrated here).
materials science, multidisciplinary,chemistry, physical,energy & fuels