Slip‐line‐guided Growth of Graphene
Yanglizhi Li,Haiyang Liu,Zhenghua Chang,Haoxiang Li,Shenxing Wang,Li Lin,Hailin Peng,Yujie Wei,Luzhao Sun,Zhongfan Liu
DOI: https://doi.org/10.1002/adma.202201188
IF: 29.4
2022-05-07
Advanced Materials
Abstract:Manipulating the crystal orientation of emerging two‐dimensional (2D) materials via chemical vapor deposition (CVD) is a key premise for obtaining single‐crystalline films and designing specific grain‐boundary (GB) structures. Herein, we demonstrated the controllable crystal orientation of graphene during the CVD process on a single‐crystal metal surface with preexisting atomic‐scale stair steps resulting from dislocation slip lines. The slip‐line‐guided growth principle was established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. We successfully synthesized not only large‐area single‐crystal graphene, but also bi‐crystal graphene with controllable GB misorientations by rationally employing tailored metal substrate facets. As a demonstration, bi‐crystal graphenes with misorientations of ∼21° and ∼11° were constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bi‐crystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom‐up manner. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology