Abstract:Conventional CMOS transistors will reach its power wall, a huge leakage power consumption limits the performance growth when technology scales down, especially beyond 45nm technology nodes. Spin based devices are one of the alternative computing technologies that aims to replace the current MOS based circuits by taking the advantage of their attractive characteristics, including non-volatility, high integration density and small cell area. The development of technologies such as spin-transfer torque random access memory (STT-RAM) and spin torque majority gate logic has become a story of great success. However, most of these technologies faces problems like, small operation margin, poor fan-out ability, etc. As the latest spin technology, Giant Spin Hall Effect (GSHE) Magnetic Tunneling Junction (MTJ) demonstrates a much better operation speed, switching probability and resistance margin. By leveraging the benefit of greater power efficiency and area density, GSHE MTJ elements become a suitable candidate for spintronic logic gates. Compare with traditional MOS transistors based logic gates, GSHE MTJ based logic can operate as a non-volatile memory and requires a much smaller number of elements to perform same logical operations (i.e., 'AND', 'OR', 'NAND' or 'NOR' gate.). And compare with other spin based logics, GSHE MTJ based logic also provides an better performance, excellent CMOS process compatibility and great fan-out ability.

Measurement and Analysis of PD-SOI Static Latches Based on Bistable-Gated-Bipolar Device.

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A novel dual gated lateral MOS-bipolar power device

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

CMOS Compatible Shorted Anode Auxiliary Cathode Lateral Insulated Gate Bipolar Transistors

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A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

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A Superjunction Extended Triple Gate LDMOS with Charge Accumulation Effect

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

Design and analysis of logic circuits based on 8 nm double gate MOSFET

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

An N-channel Graded-Junction Lateral Diffused MOS Transistor in 0.18&#x03bc;m Low-Power Logic CMOS Process

A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

Dual trench gates SOI LIGBT with low conduction loss

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Giant spin hall effect (GSHE) logic design for low power application

A Low Loss Soi Lateral Trench Igbt and Superjunction Device with Insulated Trench Barrier

Novel Gate-Grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material