Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

Random Telegraph Noise in 30 Nm FETs with Conventional and High-κ Dielectrics

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

RTS Amplitudes in Decanano N-Mosfets with Conventional and High-K Gate Stacks

The Origins of Random Telegraph Noise in Highly Scaled SiON Nmosfets

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps