Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

A NOVEL AND PRECISE TIME DOMAIN DESCRIPTION OF MOSFET LOW FREQUENCY NOISE DUE TO RANDOM TELEGRAPH SIGNALS

Noise modeling for RF CMOS circuit simulation

High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Improved Compact RF-Noise Modelling for Deep SubMicron MOSFETs

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

Compact Channel Noise Models for Deep-Submicron MOSFETs

Numerical modeling of RF noise in scaled MOS devices

Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: from Ideal to Statistical Devices

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Investigation on the Amplitude of Random Telegraph Noise (rtn) in Nanoscale Mosfets -Scaling Limit of "hole in the Inversion Layer" Model

The Origins of Random Telegraph Noise in Highly Scaled SiON Nmosfets

RTS Amplitudes in Decanano N-Mosfets with Conventional and High-K Gate Stacks

An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Random Telegraph Noise in 30 Nm FETs with Conventional and High-κ Dielectrics