Abstract:Introduction Ge is one of the most promising channel materials to further improve the performance of Si CMOS due to its high hole and electron mobility [1-3]. In order to overcome the current Si FinFET technology, 3D channel structure is mandatory for Ge MOSFETs. To fabricate Ge Fins, CF4- or SF6-based RIE etching is usually employed for Ge etching [Ref. needed]. However, both CF4 and SF6 RIE etching results in large surface roughness which strongly degrades the performance of Ge FinFETs. On the other hand, it is necessary to realize high selectivity of anisotropic etching of Ge which is important to obtain superior static electrical control of Fin channel. In this research, we developed a SF6-CF4 cyclic RIE etching method for Ge Fin formation with suppressed surface roughness. The impact of inserting SF6-O2 etching steps into CF4-O2 etching process on the surface roughness of Ge was systematically investigated, as well as the ratio of vertical etching to horizontal etching of Ge. It is found that with a time proportion of 60% for SF6-O2etching steps, a minimum RMS of 1.1 nm is obtained for Ge Fin etching. Experiments The CF4-O2 and SF6-O2 RIE cyclic etching were carried out for (100) Ge surfaces with the same pressure, plasma power and total gas flow. Different time proportions of 0%, 20%, 40%, 60%, 80% and 100%, were used for SF6-O2 etching steps during the CF4-O2etching, with a total etching time of each cycle for 20 s. The selectivity of vertical and horizontal etching of Ge was examined using SEM, and the surface roughness of Ge after etching was evaluated using AFM. Results and discussion Figure 1 shows the etching rate of CF4-O2 and SF6-O2 cyclic etching with different time proportion of SF6-O2 step. It is observed that the etching rate significantly increases with increase of SF6-O2 etching proportion, due to the high reactivity of SF6 with Ge [4]. The RMS of Ge surfaces after CF4-O2 and SF6-O2 cyclic etching for 20 s is evaluated by AFM (Figure 2). It is confirmed that large amount of surface roughness is generated for Ge surface after both CF4-O2 and SF6-O2 etching. With introducing SF6-O2 etching steps into CF4-O2 etching, the surface roughness of Ge is obviously reduced. The RMS values of Ge surface after CF4-O2 and SF6-O2 cyclic etching are summarized in Figure 3 as a function of the time proportion of SF6-O2 etching. It is found that with a time proportion of 60% for the SF6-O2 step, a minimum RMS of 1.1 nm is obtained for the Ge surface. The impact of SF6-O2 proportion to the ratio of vertical and horizontal etching for Ge is also examined, as shown in Figure 3. It is found that the selectivity of vertical etching decreases with increasing the SF6-O2 proportion. However, a relatively high selectivity of vertical etching of over 4 is still maintained with a time proportion of 60% for SF6-O2etching, resulting in Ge Fins with superior morphology (Figure 4). Conclusion A CF4-O2 and SF6-O2 cyclic etching method is proposed for Ge Fin formation. It is found that with a time proportion of 60% for SF6-O2etching step, superior morphology is achieved for Ge Fins with sufficiently suppressed surface roughness of 1.1 nm. References [1] S. Takagi, et al. IEDM, 2003. [2] H. Shang, et al. IBM. J. Res. Dev., 2006. [3] K. C. Saraswat, et al., Microelectro. Eng., 2008. [4] A. Campo, et al. J. Vac. Sci. Technol. B, 1995.

Influence of RIE Process Parameters on the Morphology of Sub-Wavelength Structure on Ge Substrate

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication

Reduction of RIE Induced Ge Surface Roughness by SF6-CF4 Cyclic Etching Method

Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma

Surface quality and microstructure evolution in fused silica under SF 6 /Ar reactive ion beam etching

A Parametric Study of ICP-RIE Etching on a Lithium Niobate Substrate

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Reactive ion Etching of SiO2 and Mo Sidewall Profile Process

Etching Characteristics of PECVD SiC

Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2

Reactive ion etching of SiC thin films using fluorinated gases

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Reactive Ion Etching of Poly (cyclohexene Carbonate) in Oxygen Plasma

Study of the Nanometer Scale Polysilicon Micro Structure Etching

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process