A Simulation Study of Interface Mixing During Ion-Assisted Deposition

WZ LI,RZ CUI,Y LIAO,HD LI
DOI: https://doi.org/10.1016/0042-207x(90)90046-2
IF: 4
1990-01-01
Vacuum
Abstract:Ion-beam assisted deposition (IAD) can produce strong film to substrate adhesion. The adhesion depends heavily on atom mixing near the interface. In order to study the dependence of the width of the mixed interface on the experimental parameters, a Monte Carlo study has been made using the dynamic simulation code TCIS-6. The simulation mode and calculational procedure are described. Simulation calculations indicate that the mixing increases with the bombarding energies and a saturation width appears at high energies. There is a strong relationship between the amount of mixing and the ion-to-atom arrival ratio. Some comparisons of the calculations with experimental data in the literature are also presented.
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