Abstract:The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga2 O3 structure with increase in the contents of Al3+ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al3+ ions content shows that Al3+ ions entered the Ga2 O3 lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and 4A2 --> 4T1 and 4A2 --> 4T2 transition of Cr3+ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al3+ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr3+ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr3+ ion is attributed to crystal field strength increasing. The Cr3+ ion luminescence changes from a broadband emission to a narrow-band emission with Al3+ doping, because the emission of Cr3+ ion changed from 4 T2 --> 4A2 to 2E --> 4A2 transition with the crystal field change after Al3+ ions doping. The Al3+ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al3+ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.

Spectrum designation and effect of Al substitution on the luminescence of Cr3+ doped ZnGa2O4 nano-sized phosphors

[Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping]

Effect of Ga3+ substitution on the photoluminescence properties of ZnAl2O4 red phosphor

Photoluminescence Properties Influenced by Calcining Condition and Doping Concentration of Nano-Sized ZnGa<sub>2</sub>O<sub>4</sub>: Cr<sup>3+</sup>

Tunable luminescence in co-doped Zn3Al2Ge2O10:Cr3+ by controlling crystal field splitting and nephelauxetic effect

Effect of Ga3+ ion doping on emission thermal stability and efficiency of MgAl2O4:Cr3+ phosphor

Effect of Cr3+-doping Concentration on Luminous Intensity of Zn1.4Al1.2Ge0.4O4: Xcr3+

Regulation of the Phase Composition on Zn1.4Al1.2Ge0.4O4: Cr3+ Phosphor Luminescence Color

Influence of inversion defects and Cr–Cr pairs on the photoluminescent performance of ZnAl 2 O 4 crystals

Suppression of photocatalysis and long-lasting luminescence in ZnGa2O4 by Cr3+ doping

Mn2+ Ions Substitution Inducing Improvement of Optical Performances in ZnAl2O4: Cr3+ Phosphors: Energy Transfer and Ratiometric Optical Thermometry

Preperation and Photoluminescent Properties of Ca2AlSi3O2N5:Sm3+ Phosphor

Chemical tuning of photo- and persistent luminescence of Cr3+-activated beta-Ga2O3 by alloying with Al2O3 and In2O3

Abnormal Lattice Shrinkage, Site Occupation, and Luminescent Properties of Cr3+-Activated Β-Al2o3 Structure Phosphors

Influence of inversion defects and Cr–Cr pairs on the photoluminescent performance of ZnAlO crystals

Effect of Y3+ on the photoluminescence of MgAl2O4:Cr3+ nanopowders

Hetero-valent substitution induced luminescence enhancement of Zn1-Ga2+O4+δ:Cr3+ near infrared phosphors for plant cultivation

The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al)

Effect of Cr on Long-Persistent Luminescence of Near-Infrared Phosphor Zn3Ga2Ge2O10:Cr3+

Near-Infrared Luminescence And Color Tunable Chromophores Based On Cr3+-Doped Mullite-Type Bi-2(Ga,Ai)(4)O-9 Solid Solutions

Influence of Mn2+ ions on the structure, spectral characteristics and optical thermometry performances of ZnAl2O4:Cr3+ multifunctional phosphors