Abstract:The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga2 O3 structure with increase in the contents of Al3+ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al3+ ions content shows that Al3+ ions entered the Ga2 O3 lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and 4A2 --> 4T1 and 4A2 --> 4T2 transition of Cr3+ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al3+ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr3+ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr3+ ion is attributed to crystal field strength increasing. The Cr3+ ion luminescence changes from a broadband emission to a narrow-band emission with Al3+ doping, because the emission of Cr3+ ion changed from 4 T2 --> 4A2 to 2E --> 4A2 transition with the crystal field change after Al3+ ions doping. The Al3+ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al3+ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.

Photoluminescence Properties Influenced by Calcining Condition and Doping Concentration of Nano-Sized ZnGa<sub>2</sub>O<sub>4</sub>: Cr<sup>3+</sup>

Photoluminescent and Electroluminescent Characteristics of Znga2o4 : Cr3+ Red Phosphor

Spectrum designation and effect of Al substitution on the luminescence of Cr3+ doped ZnGa2O4 nano-sized phosphors

Synthesis and photoluminescent properties of Eu3+-doped ZnGa2O4 nanophosphors

Preparation and optical properties of ZnGa2O4:Cr3+ thin films derived by sol–gel process

Photoluminescent and Electroluminescent Properties of ZnGa_2O_4:Eu~(3+) Red Phosphor

[Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping]

Effect of Cr on Long-Persistent Luminescence of Near-Infrared Phosphor Zn3Ga2Ge2O10:Cr3+

Temperature-dependent Luminescent Properties of Cr3+ Doped ZnGa2O4 Far-Red Emitting Phosphor

Enhancement of Red Persistent Luminescence in Cr<sup>3+</sup>-Doped ZnGa<sub>2</sub>O<sub>4</sub>Phosphors by Bi<sub>2</sub>O<sub>3</sub>Codoping

Synthesis and characterization of ZnGa2O4:Cr3+Ge3+ compounds with tunable photoluminescence properties

First-principles calculations of structural, electronic and optical properties of ZnGa2O4:Cr3+ system

Band-gap Variation and a Self-Redox Effect Induced by Compositional Deviation in ZnxGa2O3+x:Cr3+ Persistent Phosphors

Effect of Cr3+-doping Concentration on Luminous Intensity of Zn1.4Al1.2Ge0.4O4: Xcr3+

Effect of Ga3+ substitution on the photoluminescence properties of ZnAl2O4 red phosphor

Effect of Ga3+ ion doping on emission thermal stability and efficiency of MgAl2O4:Cr3+ phosphor

Study on ZnGa2O4:Cr3+ A.c. Powder Electroluminescent Device

Effects of Er3+ And/or Cr3+ Doping on Crystallization Activation Energy and Fluorescence Properties of Transparent ZnGa2O4 Glass-Ceramics

Preparation Of Zn3ga2ge2o10:Cr3+, Al3+ Nanometer Phosphors Via Sol-Gel Method

Suppression of photocatalysis and long-lasting luminescence in ZnGa2O4 by Cr3+ doping

Synthesis, Crystal Structure, and Enhanced Luminescence of Garnet‐Type Ca3Ga2Ge3O12:Cr3+ by Codoping Bi3+