Synthesis and characterization of ZnGa2O4:Cr3+Ge3+ compounds with tunable photoluminescence properties

Pankaj Kumar,Aditya Sharma,Priyanka Bishnoi,Ankush Vij,Sandeep Kumar,Hyun-Joon Shin,K. H. Chae,B. H. Lee,S. O. Won,Sharma, Aditya
DOI: https://doi.org/10.1007/s40042-023-00888-6
2023-07-25
Journal of the Korean Physical Society
Abstract:Pure and doped (Cr and Ge) ZnGa 2 O 4 compounds are prepared using solid-state reaction method. Single-phase nature of pure and doped ZnGa 2 O 4 compounds is investigated using X-ray diffraction (XRD). XRD results indicate lower theta angle shifting, decrease in particle size and tensile strain in the doped samples. A granular morphology of amalgamated particles is seen in the SEM images. EDS results convey, practically, the same concentrations (atm%) of doped elements as used during the preparation. X-ray absorption near-edge structure (XANES) results helped to determine the valence state of elements. O K-edge XANES shows a significant orbital hybridization of O 2p shells with the d shells of doped atoms (i.e., Cr and Ge). Broad PL bands, of nearly the white-light emission, are observed in all of the samples. Modification in the PL intensity and emitted wavelengths, upon doping of Cr 3+ and Ge 3+ ions, are discussed through the energy transfer mechanisms and defects in the compounds.
physics, multidisciplinary
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