Abstract:Broadband near-infrared (NIR) phosphors, as key materials in NIR phosphor-converted light-emitting diodes (pc-LEDs) for emerging applications, have recently attracted considerable attention. Herein, by selecting a comprehensive engineering strategy of co-substituting [Al 3+ -Al 3+ ] with [Mg 2+ -Ge 4+ ] units and increasing Cr 3+ concentration, a novel Cr 3+ -doped ZnAl 1.16 Mg 0.4 Ge 0.4 O 4 (ZA(MG) 0.4 :2Ā at.%Cr 3+ ) phosphor with continual broadband NIR emission was synthesized. The site occupation of Mg 2+ /Ge 4+ in ZnAl 2 O 4 is unraveled by Rietveld structure refinement and density functional theory (DFT) calculations. According to the photoluminescence behaviors, the formed defect clusters of Zn Al ' -Cr 3+ -Ge Al Ā· and Mg Al ' -Cr 3+ -Ge Al Ā· can not only introduce shallow defects to serve as new traps to obtain long-persistent luminescence but can also enhance the emission intensity at ā1⁄4689Ā nm and ā1⁄4694Ā nm. The quantity and scale of Cr 3+ -Cr 3+ pairs and Cr 3+ in distorted sites, which can improve the thermal quenching resistance and emission intensity in the range of 700ā800Ā nm, can be accurately regulated by varying the concentration of Cr 3+ . Under 387Ā nm excitation, the designed material exhibits intensive NIR emission from 685 to 750Ā nm with a wide full-width at half maximum (FWHM) of 95Ā nm. The electroluminescence spectrum and potential applications of the NIR pc-LED prepared using ZA(MG) 0.4 :2Ā at.%Cr 3+ phosphor are also reported. The results promise a feasible strategy to develop NIR phosphors as NIR pc-LEDs lighting sources for applications in non-destructive detection and anti-counterfeiting.

Study on ZnGa2O4:Cr3+ A.c. Powder Electroluminescent Device

Photoluminescent and Electroluminescent Characteristics of Znga2o4 : Cr3+ Red Phosphor

Near-infrared thin-film electroluminescent device from ZnGa2O4:Cr3+ on silicon wafer

A CuO Nanowire‐Based Alternating Current Oxide Powder Electroluminescent Device with High Stability

A Garnet-Based Ca2YZr2Al3O12:Eu3+ Red-Emitting Phosphor for N-Uv Light Emitting Diodes and Field Emission Displays: Electronic Structure and Luminescence Properties

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Alternating Current‐Driven Oxide‐Powder Electroluminescent Device Employing Vertically Aligned ZnO Nanowire Array

Luminescence Properties And Energy Transfer Of Ce3+,Tb3+-Coactivated-Sialon Phosphors

Temperature-dependent Luminescent Properties of Cr3+ Doped ZnGa2O4 Far-Red Emitting Phosphor

Effect of Ga3+ substitution on the photoluminescence properties of ZnAl2O4 red phosphor

Preparation Of Zn3ga2ge2o10:Cr3+, Al3+ Nanometer Phosphors Via Sol-Gel Method

Cathodoluminescent Properties Of Nanocrystalline Lu3ga5o12:Tb3+ Phosphor For Field Emission Display Application

Tunable luminescence in co-doped Zn3Al2Ge2O10:Cr3+ by controlling crystal field splitting and nephelauxetic effect

Electroluminescence From Doped Zns Nanocrystals Polymer Composite Systems

Fabrication and characterizations of Cr 3+ ‐doped ZnGa 2 O 4 transparent ceramics with persistent luminescence

Enhancing quantum efficiency and tuning photoluminescence properties in far-red-emitting phosphor Ca14Ga10Zn6O35:Mn4+ based on chemical unit engineering

Red-emitting Nano-Porous 12cao·7al2o3:Sm3+ Conductive Phosphor for Low-Voltage Field Emission Displays

Cr3+‐activated Li5Zn8Al5Ge9O36: A Near‐infrared Long‐afterglow Phosphor

Large-scale irrigation of Cr 3+ into different octahedra of zinc aluminate toward continual broadband near-infrared emission

A novel efficient broadband near-infrared phosphor LiGaGe2O6:Cr3+ with EQE enhancement and spectral tuning by Sc3+-Ga3+ substitution for NIR pc-LED application

Achieving Luminescence of Sr3Ga1.98In0.02Ge4O14:0.03Cr3+ via [In3+] Substitution [Ga3+] and Its Application to NIR pc-LED in Non-Destructive Testing