The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al)

Ping Yang,Mengkai Lü,Dong Xu,Duolong Yuan,Mei Pan,Guangjun Zhou
DOI: https://doi.org/10.1016/S0025-5408(01)00616-X
IF: 5.6
2001-01-01
Materials Research Bulletin
Abstract:In this paper, we report the investigation of photoluminescence (PL) characteristics of ZnS nanocrystals doped with M3+(M = In, Ga and Al). X-ray diffraction analysis shows that the diameter of the particles is 2.6 ± 0.2 nm. The nanoparticles can be doped with M3+ (In, Al, Ga) ions during synthesis without altering the X-ray diffraction pattern and the emission wavelength (440 nm) of the samples. However, the fluorescence efficiencies are varied with the variation of doping mole ratio of In3+. The relative fluorescence intensity of In3+-doped sample is about 1.5 times of that of ZnS nanocrystallites.
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