Abstract:One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were investigated. The results show that the higher doping level is beneficial for etching the silicon wafer and forming silicon nanowire arrays. This is because the higher doping level introduces more impurities and defects on the surface of the silicon wafer, and at the same time, the Schottky barrier between the silicon wafer with the higher doping level and the solution is lower. Thus, the silicon wafer is easier to oxidate to form nanowire arrays. The AgNO3 concentration plays a critical role in the fabrication of the porous silicon nanowire arrays during the one-step MACE process. If AgNO3 concentration is too low or too high, corrosion pits and collapsed clusters of nanowires could form on the surface of the silicon wafer. When AgNO3 concentration was 0.02 mol·L-1, silicon nanowires grew and became longer, eventually forming a porous array of silicon nanowire. In the meantime, as silicon nanowires grew, capillary stress between nanowires caused agglomeration at the top of some nanowires. Furthermore, when HF solution concentration exceeded 4.6 mol·L-1, the length of silicon nanowire increased with increasing HF concentration. Furthermore, a porous structure was formed on top the silicon nanowire, and the porosity of the silicon nanowires increased with increasing HF concentration. This was due to a large number of Ag+ random nucleations at the top of the nanowires, and lateral etching of the silicon nanowires occurred. In the end, the formation process of the porous silicon nanowires is explained by a model based on the experimental phenomena. It is attributed to the deposition of silver ions and the oxidation of dissolved silicon substrates.

Fabrication and Electron Field Emission of Silicon Nanowires \\Synthesized by Chemical Etching

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Fabrication of Ultra-Thin Silicon Nanowire Arrays Using Ion Beam Assisted Chemical Etching.

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Preparation of Silicon Nanowires and Porous Silicon Composite Structure by Electrocatalytic Metal Assisted Chemical Etching

Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching

Effect of the Microstructure of Ag Catalysts in the Fabricating Process of Silicon Nanowires

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires

Porous Silicon Nanowire Arrays Fabrication Through One-Step Metal-Assisted Chemical Etching

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

Influence Of Fabrication Parameters On The Nanostructure Of Si-Nws Under Hf/Fe(No3)(3) Etching System

Electron Field Emission from Silicon Nanowires

Fabrication of highly oriented 4H-SiC gourd-shaped nanowire arrays and their field emission properties

Field Emission of Silicon Nanowires Grown on Carbon Cloth

Silver catalysis in the fabrication of silicon nanowire arrays

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Si Nanowires Arrays Fabricated by Wet Chemical Etching for Antireflection and Self-Cleaning

Structural and Optical Characteristics of Silicon Nanowires Fabricated by Wet Chemical Etching

Lithography-free Fabrication of Silicon Nanowire and Nanohole Arrays by Metal-Assisted Chemical Etching