Heat wave phenomena in IC chips

Yun-Sheng Xu,Zeng-Yuan Guo

DOI: https://doi.org/10.1016/0017-9310(95)00007-V

IF: 5.2

1995-01-01

International Journal of Heat and Mass Transfer

Abstract:null

What problem does this paper attempt to address?

Tackling the Coupled Thermal Stress and Heat at Small Scales

Zhan Haifei,Lü Chaofeng

DOI: https://doi.org/10.1007/s11433-022-1961-2

2022-01-01

Science China Physics Mechanics and Astronomy

Abstract:>Fast technological advancement has driven our society into an electronic era(Figure 1(a)). The ongoing miniaturization significantly increases the power density and heat flux density of electronics, e.g., in the order of 100 W/cm 2 for a server chip. For illustration, at a temperature difference of
Non-Fourier Heat-Conduction in Ic Chip

ZY GUO,YS XU

DOI: https://doi.org/10.1109/itherm.1992.187774

1992-01-01

Abstract:The authors address heat conduction in an IC chip with special attention paid to the evaluation of the non-Fourier effect and its importance for the thermal analysis and design of an IC chip. Instead of the classic Fourier equation based on the diffusion mechanism, a finite-speed propagation model in a spherical system expressed in a hyperbolic equation is used to predict the transient process of heat conduction, when a heat source with a square-corner switching wave form is applied. The peak temperature, spatial difference, and time variation of temperature which are critical to the thermal reliability of the chip are given and compared with that obtained from the Fourier equation. Analytical and numerical results show that non-Fourier effects covering the higher peak temperature and thermal stresses, a larger temperature difference between components, and stronger thermal noises are significant to IC chip reliability. It is suggested that if the product or shift frequency and the relaxation time of the medium exceeds 0.1 it is necessary to take non-Fourier effects into consideration.< >
Self-adaptive Passive Temperature Management for Silicon Chips Based on Near-Field Thermal Radiation

Sen Zhang,Wei Du,Wenjie Chen,Yongdi Dang,Naeem Iqbal,Yi Jin,Yungui Ma

DOI: https://doi.org/10.1063/5.0121043

IF: 2.877

2022-01-01

Journal of Applied Physics

Abstract:Temperature management in modern instruments is often a great task, particularly for silicon chip technologies against the background of the ever-increasing demanding for larger scale and higher density electronics integration. Enormous efforts have been made to solve this long-pending issue, mostly relying on active equipment that consume more energy and more space. Here, a compact thermal management technique for silicon chips is proposed, which is able to passively maintain the operation temperature of targets within a wide range of input power. The core part is a self-adaptive near-field thermal radiation system made of a phase-changeable metasurface and graphene/hBN heterostructure with surface plasmon/phonon modes. Numerically, we show that integrated with such a setup, a 0.1-mm thick silicon substrate could automatically maintain its operation temperature within a narrow window (∼333 ± 7 K) when loaded with heat power varied in 0.1–1 W cm−2. As a comparison, the temperature will change 614 or 319 K for a bare or blackbody-coated silicon substrate. The dynamic process of thermal homeostasis is discussed by using the transient thermal equation. The results imply that the current design is suitable for providing a compact, conformal thermal functional coat to passively manage temperatures of heated electronic components, particularly in vacuum.
Self-heating effects in integrated circuits with hot spot method and electro-thermal coupling method

Miao Liu,Runde Zhou,Songliang L. Jia,YuQin Gu,Xiao Liang,Rong Zhang

2001-01-01

Abstract:The self-heating effects in integrated circuits greatly effect circuit performance and power consumption. The HSPICE circuit simulator and an improved hot spot thermal analysis method are used in a new fast electro-thermal relaxation method to study the self-heating effects. Given the layout information and the input signal pattern, the method can calculate the temperature distribution on a chip and the chip performance. The simulation result agrees well with the temperature distribution on the facsimile thermal printing head ASIC chip measured with an infrared thermal imaging system.
Study on Self-Heat Effects in Integrated Circuits with Hot-Spot and Electro-Thermal Coupling Methods

M Liu,RD Zhou,SL Jia,YQ Gu,XG Liang,RG Zhang

DOI: https://doi.org/10.1109/icasic.2001.982705

2001-01-01

Abstract:The self-heat effects in integrated circuits have great impact on circuit performance and power consumption. Based on HSPICE circuit simulator and improved Hot-Spot thermal analysis, this paper presents a new fast electro-thermal relaxation method to study the self-heat effects. Given the layout information and the input signal pattern, the developed method may calculate the temperature distribution of a chip, and investigate the chip performance under the distribution. With infrared thermal image system, the measured temperature distribution of the facsimile thermal printing head ASIC chip agrees very well with the simulation result.
Comprehensive Thermal Resistance Model of Forced Air Cooling System for Multiple Power Chips

Hongyi Lin,Xiao Guo,Guozhu Chen

DOI: https://doi.org/10.1016/j.egyr.2021.01.071

IF: 5.2

2021-01-01

Energy Reports

Abstract:It is necessary to design a heat sink according to the losses of chips in the application of power chips to maintain the temperature of the chip junction at a low level. Since multiple power chips are distributed on the same heat sink, the surface temperature of the heat sink is unevenly distributed, the chips located at the air outlet need to withstand higher temperatures. In order to describe the surface temperature of the heat sink accurately, a novel comprehensive thermal resistance of the forced air cooling system for multi-power chips was proposed. A temperature rise test by a static var generator (SVG) prototype was designed to prove the accuracy of the model proposed. The thermal resistance error of the model proposed in this paper is only 2%. Comparing with two traditional thermal models, the accuracy of the novel thermal resistance model is improved by more than 20%.
Ultrafast Temperature Profile Calculation in Ic Chips

T. Kemper,Y. Zhang,Z. Bian,A. Shakouri

DOI: https://doi.org/10.48550/arXiv.0709.1850

2007-09-12

Materials Science

Abstract:One of the crucial steps in the design of an integrated circuit is the minimization of heating and temperature non-uniformity. Current temperature calculation methods, such as finite element analysis and resistor networks have considerable computation times, making them incompatible for use in routing and placement optimization algorithms. In an effort to reduce the computation time, we have developed a new method, deemed power blurring, for calculating temperature distributions using a matrix convolution technique in analogy with image blurring. For steady state analysis, power blurring was able to predict hot spot temperatures within 1 degree C with computation times 3 orders of magnitude faster than FEA. For transient analysis the computation times where enhanced by a factor of 1000 for a single pulse and around 100 for multiple frequency application, while predicting hot spot temperature within about 1 degree C. The main strength of the power blurring technique is that it exploits the dominant heat spreading in the silicon substrate and it uses superposition principle. With one or two finite element simulations, the temperature point spread function for a sophisticated package can be calculated. Additional simulations could be used to improve the accuracy of the point spread function in different locations on the chip. In this calculation, we considered the dominant heat transfer path through the back of the IC chip and the heat sink. Heat transfer from the top of the chip through metallization layers and the board is usually a small fraction of the total heat dissipation and it is neglected in this analysis.
Embedded Micro-Pin Fin Heat Sink of Two-Phase Liquid Cooling for High Heat Flux 3D ICs

K. Chui,Jing Lou,D. Le,Xiaowu Zhang,M. C. Jong,Hongying Li,B. L. Lau,K. Y. Au,G. Tang,H. Feng

DOI: https://doi.org/10.1109/ECTC51909.2023.00337

2023-05-01

Abstract:This paper presents a novel two-phase liquid cooling solution of high-power integrated circuit (IC) chips using embedded micro-pin fin heat sink (MPFHS). A titanium thin film heater and two resistance temperature detectors (RTDs) are deposited on the active surface of a silicon chip, to simulate the functional dice and measure chip temperature, respectively. The backside surface of silicon chip is etched to form the embedded MPFHS, and then bonded to a silicon cap. Printed circuit board (PCB) is designed and fabricated to power the heater and collect signals from RTDs. The coolant (deionized water) is fed and collected through the thin side openings of the chip. Manifolds are 3D printed with stainless steel to properly match the openings. Experimental setup of two-phase liquid cooling loop is built for testing and characterization. A wide range of coolant flowrate and heat flux of heater is tested. Heat flux up to 188 W/cm2 is achieved with small coolant flowrates experimentally. Chip temperature and temperature gradient linearly increase as heat flux increases, which can be reduced by increasing coolant flowrate. In two-phase regime, chip temperature and pressures at inlet and outlet are highly fluctuated, which is not preferable in chip cooling. Further investigations are to be carried out for a more stable cooling.

Materials Science,Engineering
Electromagnetic Radiation in the Range of GHz of Integrated Circuit Package with Heat Sink

Xing-Lei Liang,Jia-Qi Xing,Tianwu Li,Hang Jin,Shi-Yun Zhou,Er-Ping Li

DOI: https://doi.org/10.1109/GSMM53250.2021.9511940

2021-01-01

Abstract:With the increase of operating frequency of electronic devices, electromagnetic interference (EMI) radiation in the 20 GHz and higher frequency is becoming an increasingly difficult problem to solve, especially in the integrated circuit (IC) package with heat sink where the radiation from the chip will leak out through the gap between the heat sink and the ground plane of PCB. In this paper, the electromagnetic radiation mechanism of the package with heat sink in the frequency range up to 40 GHz is proposed from plenty of full-wave simulations using different absorbing materials, which is beneficial to the selection of package structural parameters and the suppression of radiation. According to the proposed mechanism, the methods to improve the EMI radiation suppression effect in the frequency range from 20 GHz to 30 GHz are designed.
Thermoelectric active cooling for transient hot spots in microprocessors

Yihan Liu,Hao-Yuan Cheng,Jonathan A Malen,Feng Xiong

DOI: https://doi.org/10.1038/s41467-024-48583-9

2024-05-20

Abstract:Modern microprocessor performance is limited by local hot spots induced at high frequency by busy integrated circuit elements such as the clock generator. Locally embedded thermoelectric devices (TEDs) are proposed to perform active cooling whereby thermoelectric effects enhance passive cooling by the Fourier law in removing heat from the hot spot to colder regions. To mitigate transient heating events and improve temperature stability, we propose a novel analytical solution that describes the temperature response of a periodically heated hot spot that is actively cooled by a TED driven electrically at the same frequency. The analytical solution that we present is validated by experimental data from frequency domain thermal reflectance (FDTR) measurements made directly on an actively cooled Si thermoelectric device where the pump laser replicates the transient hot spot. We herein demonstrate a practical method to actively cancel the transient temperature variations on circuit elements with TEDs. This result opens a new path to optimize the design of cooling systems for transient localized hot spots in integrated circuits.
Experimental Investigation on Natural Air Cooling of IC Boards

motoo fujii,toshio tomimura,xing zhang,satoru gima

DOI: https://doi.org/10.3154/jvs.11.supplement2_157

1991-01-01

Journal of the Visualization Society of Japan

Abstract:An experimental investigation is made on natural air cooling of five vertical parallel IC boards with equal interval and the same sizes (285 hx237 w mm 2) of each board, where gap between the boards ranges 9.8 to 34.8mm and heat generated per each board from 3.5 to 16.0W. The temperature fields among boards are visualized be Mach-Zehnder Interferometer in the three different regions to show the effects of packages, gaps and heat fluxes. The surface temperatures of packages and boards are also measured by copper-constantan thermocouples. Discussions are made by comparing the local Nusselt numbers obtained with the previous correlation.
A Comparative Numerical Analysis of Cold Plates for Thermal Management of Chips With Hotspots

Mahdi Farahikia,Ping-Chuan Wang,Louis Reyes,Matthew Krumholtz

DOI: https://doi.org/10.1115/1.4064523

2024-02-07

Journal of Electronic Packaging

Abstract:Abstract Thermal and hydraulic performances of seven water-cooled minichannel cold plates with different internal structures are compared using numerical analysis. Recent increasing demands for high-performance computing have led to serious challenges in the thermal management of electronic devices. In addition to dangerous on-chip temperatures, heterogeneous integration and local regions of elevated temperatures (hotspots) lead to nonuniform chip-level temperature distributions. As a result, the lifespan and reliability of electronic devices are adversely impacted. Due to the limitation of the air-cooled heat sinks, several new methods, such as liquid-cooled microchannel cold plates are developed to remedy these challenges. The objective of this work is to provide a comparative numerical study of the effectiveness of different minichannel cold plate internal structures in the thermal management of a chip with a nonuniform power map and a hotspot. Cold plate thermal resistance, on-chip temperature uniformity, and pump power were the metrics used for this comparison. For four coolant inlet flow rates within the laminar regime, it is seen that increasing the inlet flowrate enhances the thermal resistance of all cold plate designs while creating less uniformity in chip-level temperature distribution relative to the conventional straight microchannels. Concentrating pin fins on the hotspot showed a 7.2% reduction in thermal resistance, despite increasing temperature nonuniformity by about 7.6%. However, it is observed that hotspot-focused pin fins are more effective in lowering the chip's maximum temperature. Obtaining lower chip-level nonuniformity may be possible by modifying the inlet and outlet conditions of the cold plates.

engineering, mechanical, electrical & electronic
A Low Computational Cost and Accurate Thermal Calculation Method for Multi-hotspot IC

Daixing Wang,Yudan Pi,Wei Wang,Yufeng Jin

DOI: https://doi.org/10.1109/eptc.2018.8654348

2018-01-01

Abstract:As the feature size scaling down, the integration degree increasing, the power density increasing and the introduction of low thermal conductivity material flourishing, the integrated circuit(IC) is facing a serious thermal challenge. Thermal analysis is getting essential for high power IC design. Hotspot, usually constructed by high power devices and BEOL, has been considered as the most urgent concern, with a localized power density above 500 W/cm 2 . In the direct numerical simulation, the great amount of the hotspots and the large size differences contribute to huge mesh numbers, which means high computational cost. In this paper, a new calculation method on hotspots uniformization based on thermal spreading theory and the superposition principle is proposed. Temperature excess distribution can be divided into two parts: the local hotspots temperature distribution and the background distribution. The simplified method is verified by a thermal numerical simulation. The present thermal effectiveness shows potential for the high power IC design.
Finite Element Analysis of Thermoelectric Refrigeration on the Heat Surface of the Chip Packaging

Wentao Gao,Qinghai Luo,Gaofeng Li,Shenghao Xiao

DOI: https://doi.org/10.4028/www.scientific.net/amm.501-504.2271

2014-01-01

Applied Mechanics and Materials

Abstract:On the basis of analysis of the principle of thermoelectric refrigeration and the research on the thermoelectric refrigeration technology and the thermal theoretical analysis of electronic components by domestic and foreign scholars, research on thermoelectric cooling of the uniform heat packaging surface from both the surface integral heat radiating and the local hot spot cooling of the chip by finite element numerical simulation and cooling both the chip and the heat from the whole surface of the local hot spots, using the finite element method of numerical simulation techniques Package uniform surface heat thermoelectric cooling study found the thermoelectric cooling hot surfaces in a uniform local cooling effect and temperature distribution, and pointed out that the chip thermoelectric cooling and thermal design layout surface will be in the future to improve the electroniccomponents of a hot heat important research direction.
ThermalScope: Multi-Scale Thermal Analysis for Nanometer-Scale Integrated Circuits

Zyad Hassan,Nicholas Allec,Fan Yang,Li Shang,Robert P. Dick,Xuan Zeng

DOI: https://doi.org/10.1109/tcad.2009.2017428

IF: 2.9

2009-01-01

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Abstract:Thermal analysis has long been essential for designing reliable, high-performance, cost-effective integrated circuits (ICs). Increasing power densities are making this problem more important. Characterizing the thermal profile of an IC quickly enough to allow feedback on the thermal effects of tentative design changes is a daunting problem, and its complexity is increasing. The move to nanoscale fabrication processes is increasing the importance of quantum thermal phenomena such as ballistic phonon transport. Accurate thermal analysis of nanoscale ICs containing hundreds of millions of devices requires characterization of thermal effects on length scales that vary by several orders of magnitude, from nanoscale quantum thermal effects to centimeter-scale cooling package impact. Existing chip-package thermal analysis methods based on classical Fourier heat transfer cannot capture nanoscale quantum thermal effects. However, accurate device-level modeling techniques, such as molecular dynamics methods, are far too slow for use in full-chip IC thermal analysis. In this work, we propose and develop ThermalScope, a multi-scale thermal analysis method for nanoscale IC design. It unifies microscopic and macroscopic thermal physics modeling methods, i.e., the Fourier and Boltzmann transport modeling methods. Moreover, it supports adaptive multi-resolution modeling. Together, these ideas enable efficient and accurate characterization of nanoscale quantum heat transport as well as chip-package level heat flow. ThermalScope is designed for full-chip thermal analysis of billion-transistor nanoscale IC designs, with accuracy at the scale of individual devices. ThermalScope enables accurate characterization of temperature-related effects, such as variation in leakage power and delay. ThermalScope has been implemented in software and used for full-chip thermal analysis and temperature-dependent leakage analysis of an IC design with more than 150 million transistors. It will be publicly released for free academic and personal use.
Heat Generation Mechanisms of Self-Heating Effects in Soi-Mos

Zheng-Lai Tang,Bing-Yang Cao

DOI: https://doi.org/10.1109/jeds.2024.3393019

2024-01-01

IEEE Journal of the Electron Devices Society

Abstract:The development of microelectronic devices to the nanoscale intensifies self-heating challenges, affecting efficiency and durability. Understanding the mechanisms of heat generation at this scale is crucial, yet research extending beyond Joule heat remains limited. This paper simulates the self-heating effect of Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistors (SOI-MOS) at the nanoscale and researches the characteristic and influence of different heat generation mechanisms, including the Joule heat, recombination heat and Peltier-Thomson heat. Our results provide a detailed two-dimensional distribution and intensity of various heat generation mechanisms within the silicon channel layer. It is found that Peltier-Thomson heat has the same magnitude as Joule heat at the nanoscale, and exhibits an alternating distribution pattern of hot and cold sources under the gate. But recombination heat is relatively negligible. The analysis of the influence of different heat mechanisms emphasizes the important role of Joule heat. While the offset effect limits the impact of Peltier-Thomson heat, its significance to device thermal performance should not be ignored. More importantly, this study investigates the impact of characteristic size on different heat generation mechanisms, revealing the size dependence of Peltier-Thomson heat.
Ultrafast Unidirectional On‐Chip Heat Transfer

Junbo Yang,Miao Liu,Tanhe Wang,Ge Meng,Zhaoyang Wang,Chunsheng Guo,Keng‐Te Lin,Han Lin,Baohua Jia

DOI: https://doi.org/10.1002/smll.202402575

IF: 13.3

2024-06-12

Small

Abstract:This study presents a novel approach using silicon‐based valley photonic crystals (VPCs) for ultrafast and unidirectional heat transfer on a microscale. In the infrared wavelength region, the VPCs achieve significant thermal rectification and maintain high transmission efficiency, even in the presence of defects. This method is robust, defect‐immune, and fully CMOS compatible, addressing the limitations of traditional thermal conduction methods. Effective and rapid heat transfer is critical to improving electronic components' performance and operational stability, particularly for highly integrated and miniaturized devices in complex scenarios. However, current thermal manipulation approaches, including the recent advancement in thermal metamaterials, cannot realize fast and unidirectional heat flow control. In addition, any defects in thermal conductive materials cause a significant decrease in thermal conductivity, severely degrading heat transfer performance. Here, the utilization of silicon‐based valley photonic crystals (VPCs) is proposed and numerically demonstrated to facilitate ultrafast, unidirectional heat transfer through thermal radiation on a microscale. Utilizing the infrared wavelength region, the approach achieves a significant thermal rectification effect, ensuring continuous heat flow along designed paths with high transmission efficiency. Remarkably, the process is unaffected by temperature gradients due to the unidirectional property, maintaining transmission directionality. Furthermore, the VPCs' inherent robustness affords defect‐immune heat transfer, overcoming the limitations of traditional conduction methods that inevitably cause device heating, performance degradation, and energy waste. The design is fully CMOS compatible, thus will find broad applications, particularly for integrated optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Heat conduction of electrons and phonons in thermal interface materials

Yunshan Zhao,Xiangliang Zeng,Linlin Ren,Xinnian Xia,Xiaoliang Zeng,Jun Zhou

DOI: https://doi.org/10.1039/d0qm01136c

IF: 8.6834

2021-01-01

Materials Chemistry Frontiers

Abstract:Investigation on the thermal transport of heat carriers in TIMs will aid in promoting the advancement of TIMs with high performance.

materials science, multidisciplinary,chemistry
Experimental and Numerical Study of Transient Electronic Chip Cooling by Liquid Flow in Microchannel Heat Sinks

Jingru Zhang,Tiantian Zhang,Shaurya Prakash,Yogesh Jaluria

DOI: https://doi.org/10.1080/10407782.2013.846594

2014-01-10

Abstract:Cooling of electronic chips has become a critical aspect in the development of electronic devices. Overheating may cause the malfunction or damage of electronics. The time needed for heat removal is particularly important in a wide range of electronic systems, such as switching circuits. Thus, it is important to characterize the transient behavior of the system and determine the response. Most studies in the literature have focused on steady-state circumstances and the transient effects have not been considered in the detail needed. In this article, an experimental system and a numerical model were developed to test the effects of different parameters and their influence on the transient electronic chip cooling by liquid flow in microchannel heat sinks. The temperature change with time of the system for different heat fluxes at different flow rates was determined, from which the response time is obtained. Three different configurations of multi-microchannel heat sinks were tested during the experiment. Numerical models were then developed to simulate the transient cooling for two of these configurations. A good agreement between the experimental data and numerical results showed that single-channel models are capable of simulating the thermal behavior of the entire heat sink by applying appropriate assumptions and boundary conditions. The experimental results can then be used to improve the numerical models and vice versa.
Case-embedded cooling for high heat flux microwave multi-chip array

Yunqian Song,Rong Fu,Chuan Chen,Qidong Wang,Meiying Su,Fengze Hou,Xiaobin Zhang,Jun Li,Liqiang Cao,Yunqian Song,Rong Fu,Chuan Chen,Qidong Wang,Meiying Su,Fengze Hou,Xiaobin Zhang,Jun Li,Liqiang Cao

DOI: https://doi.org/10.1016/j.applthermaleng.2022.118852

IF: 6.4

2022-09-01

Applied Thermal Engineering

Abstract:This work proposes a case-embedded cooling (CECool) for microwave multi-chip module and theoretically studies its cooling capacity based on an improved analytical model. In this solution, the microfluidic cooling is integrated inside the case of the module to shorten the path of heat transfer. The model is used to calculate the thermal resistance from the chip to the coolant. The accuracy of the model is improved by setting the thermal diffusion angle to vary with the difference in thermal conductivities between the materials, which is validated by 3D finite-element-method simulation. Thermal performance of the remote cooling approach is studied first to help determine the application range of the CECool. By optimizing the materials and the microchannel, the thermal resistance of the CECool can be reduced to 5.7 °Cmm2/W. It is possible to increase the maximum tolerant heat flux to 1300 W/cm2 by enhancing the microfluidic cooling and choosing the chip type, meanwhile keeping the rise of junction temperature below 60 °C. A thermal test vehicle composed of 4 × 4 chip array is manufactured for demonstration. The accuracy of the model is verified by the experiment at 471 W/cm2. The maximum error is only 5.4%.

energy & fuels,engineering, mechanical,thermodynamics,mechanics

Heat wave phenomena in IC chips

Tackling the Coupled Thermal Stress and Heat at Small Scales

Non-Fourier Heat-Conduction in Ic Chip

Self-adaptive Passive Temperature Management for Silicon Chips Based on Near-Field Thermal Radiation

Self-heating effects in integrated circuits with hot spot method and electro-thermal coupling method

Study on Self-Heat Effects in Integrated Circuits with Hot-Spot and Electro-Thermal Coupling Methods

Comprehensive Thermal Resistance Model of Forced Air Cooling System for Multiple Power Chips

Ultrafast Temperature Profile Calculation in Ic Chips

Embedded Micro-Pin Fin Heat Sink of Two-Phase Liquid Cooling for High Heat Flux 3D ICs

Electromagnetic Radiation in the Range of GHz of Integrated Circuit Package with Heat Sink

Thermoelectric active cooling for transient hot spots in microprocessors

Experimental Investigation on Natural Air Cooling of IC Boards

A Comparative Numerical Analysis of Cold Plates for Thermal Management of Chips With Hotspots

A Low Computational Cost and Accurate Thermal Calculation Method for Multi-hotspot IC

Finite Element Analysis of Thermoelectric Refrigeration on the Heat Surface of the Chip Packaging

ThermalScope: Multi-Scale Thermal Analysis for Nanometer-Scale Integrated Circuits

Heat Generation Mechanisms of Self-Heating Effects in Soi-Mos

Ultrafast Unidirectional On‐Chip Heat Transfer

Heat conduction of electrons and phonons in thermal interface materials

Experimental and Numerical Study of Transient Electronic Chip Cooling by Liquid Flow in Microchannel Heat Sinks

Case-embedded cooling for high heat flux microwave multi-chip array