Comparison of Band-to-band Tunneling Models in Si and Si—Ge Junctions

Jiao Yipeng,Wei Kangliang,Wang Taihuan,Du Gang,Liu Xiaoyan

DOI: https://doi.org/10.1088/1674-4926/34/9/092002

2013-01-01

Journal of Semiconductors

Abstract:We compared several different band-to-band tunneling (BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases (over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.