Abstract:The intrasubband plasmons in the long-wavelength limit and intersubband plasmons in the zero-wave-vector limit are calculated numerically for the GaAs/AlAs lateral-surface superlattices (LSSL's) with periodically structured interfaces and short lateral periods under normally applied electric fields. Square-root dispersion relations are found for the intrasubband plasmons with the in-plane wave vector \ensuremath{\Vert}${\mathit{q}}_{\mathit{z}}$\ensuremath{\Vert}\ensuremath{\ll}1 and ${\mathit{q}}_{\mathit{y}}$=0. The frequencies of the intrasubband plasmons in the LSSL's are expected to be less than those of plasmons in quantum wells with the same electron densities. Oscillations of the intrasubband-plasmon frequencies as functions of the Fermi level, or equivalently the electron density, are predicted. A sensitive dependence of the intrasubband-plasmon frequencies on the electric fields applied normally to the LSSL's is found, a result that is absent in quantum wells with planar interfaces. The energies of the intersubband plasmons are found to be close to the single-electron transition energies between the two lowest subbands at the center of the first Brillouin zone (FBZ) for the LSSL's with small interface structures and short lateral periods, typically with ${\mathit{L}}_{\mathit{x}}$200 \AA{} for the LSSL's we considered. The effects of the electron Coulomb interactions on the optical absorptions of the LSSL's are negligible. The optical absorptions of the LSSL's are dominated by the single-electron transitions across the first subband gap at the edge of the FBZ, if the electron densities are high enough to move the Fermi level into the first subband gaps of the LSSL's. Distinctive and strong intersubband-plasmon-absorption peaks appear in the optical-absorption spectra if the lateral periods of the LSSL's increase, typically if ${\mathit{L}}_{\mathit{x}}$>400 \AA{} for the LSSL's we considered. The changes of the intersubband-plasmon energies as functions of the interface structures, electron densities, lateral periods of the LSSL's, and electric fields applied normally to the LSSL's are investigated.

Cyclotron-Resonance Optical Absorption in Corrugated Lateral Superlattices

Infrared Optical Absorptions in Corrugated Lateral Surface Superlattices

The Stark Effect of Excitons in Corrugated Lateral Surface Superlattices: the Effect of Centre-of-mass Quantization

Self-consistent Calculation of Electronic Subbands in Corrugated Lateral-Surface Superlattices

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Energy Dispersions of Electronic Landau Levels in Lateral-Surface Superlattices with Periodically Structured Interfaces

Theory of Nonlinear Cyclotron Resonance in Quasi-Two-dimensional Electron Systems

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Plasmons in Lateral-Surface Superlattices with Periodically Structured Interfaces under Normally Applied Electric Fields.

Calculation of Energy Subband Structures of Corrugated Lateral-Surface Superlattices Based on Variational Principles

Electronic Structures of Gaas/Alas Lateral Superlattices

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Valley-optical absorption in planar transition metal dichalcogenide superlattices

Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands

Valence Band Structures of Gaas/Alas Lateral Superlattices

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Landau Level Spectrum in A Two-Dimensional Hole Gas in C-Doped (100) Gaas/Al0.4ga0.6as Square Quantum Well

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices