Abstract:The intrasubband plasmons in the long-wavelength limit and intersubband plasmons in the zero-wave-vector limit are calculated numerically for the GaAs/AlAs lateral-surface superlattices (LSSL's) with periodically structured interfaces and short lateral periods under normally applied electric fields. Square-root dispersion relations are found for the intrasubband plasmons with the in-plane wave vector \ensuremath{\Vert}${\mathit{q}}_{\mathit{z}}$\ensuremath{\Vert}\ensuremath{\ll}1 and ${\mathit{q}}_{\mathit{y}}$=0. The frequencies of the intrasubband plasmons in the LSSL's are expected to be less than those of plasmons in quantum wells with the same electron densities. Oscillations of the intrasubband-plasmon frequencies as functions of the Fermi level, or equivalently the electron density, are predicted. A sensitive dependence of the intrasubband-plasmon frequencies on the electric fields applied normally to the LSSL's is found, a result that is absent in quantum wells with planar interfaces. The energies of the intersubband plasmons are found to be close to the single-electron transition energies between the two lowest subbands at the center of the first Brillouin zone (FBZ) for the LSSL's with small interface structures and short lateral periods, typically with ${\mathit{L}}_{\mathit{x}}$200 \AA{} for the LSSL's we considered. The effects of the electron Coulomb interactions on the optical absorptions of the LSSL's are negligible. The optical absorptions of the LSSL's are dominated by the single-electron transitions across the first subband gap at the edge of the FBZ, if the electron densities are high enough to move the Fermi level into the first subband gaps of the LSSL's. Distinctive and strong intersubband-plasmon-absorption peaks appear in the optical-absorption spectra if the lateral periods of the LSSL's increase, typically if ${\mathit{L}}_{\mathit{x}}$>400 \AA{} for the LSSL's we considered. The changes of the intersubband-plasmon energies as functions of the interface structures, electron densities, lateral periods of the LSSL's, and electric fields applied normally to the LSSL's are investigated.

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Cyclotron-Resonance Optical Absorption in Corrugated Lateral Superlattices

Infrared Optical Absorptions in Corrugated Lateral Surface Superlattices

Self-consistent Calculation of Electronic Subbands in Corrugated Lateral-Surface Superlattices

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Calculation of Energy Subband Structures of Corrugated Lateral-Surface Superlattices Based on Variational Principles

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Theoretical Calculation of Quantum-Confined Stark Effect in InAs/GaAs Self-Assembled Quantum Dots

Asymmetric Stark shifts of exciton in InAsGaAs pyramidal quantum dots

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

On the optical Stark effect of excitons in InGaAs prolate ellipsoidal quantum dots

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Plasmons in Lateral-Surface Superlattices with Periodically Structured Interfaces under Normally Applied Electric Fields.

Exciton Absorption in Semiconductor Superlattices in A Strong Longitudinal Thz Field

Energy Dispersions of Electronic Landau Levels in Lateral-Surface Superlattices with Periodically Structured Interfaces

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic Structures of Gaas/Alas Lateral Superlattices