Growth Of Undoped Indium-Phosphide By Omvpe In An Inverted-Vertical Reactor Using Trimethylindium And Tertiarybutylphosphine And Phosphine

j d parsons,k oatis,jaling wu,a k chaddha,s r hahn,h s chen,stanley bruce wild,c deng,t plant,j marlia

DOI: https://doi.org/10.1149/1.2221023

IF: 3.9

1993-01-01

Journal of The Electrochemical Society

Abstract:The as-grown morphologies and background carrier concentrations of undoped InP epilayers grown at 650-degrees-C were determined as a function of phosphorus source [tertiarybutylphosphine (TBP) or phosphine (PH3)] and V:III ratio in an inverted-vertical (IV) metallorganic chemical vapor deposition (MOCVD) reactor. Specular surface morphology was obtained over the entire growth surf ace (16.6 cm2) at a minimum PH3 to trimethylindium (TMIn) ratio of 1 0, and at a minimum TBP to TMIn ratio of 33. Below these V:III ratios, the area of the InP epilayer surfaces exhibiting specular morphology decreased as the V:III ratio was reduced; however, the layer thicknesses remained uniform. All undoped InP epilayers were n-type. The carrier concentration (N(D)-N(A)) obtained with PH3 in the specular area of the InP epilayers was on the order of 1.5 x 10(14) cm-3 at V:III ratios up to ca. 20; at a V:III ratio of 40, N(D)-N(A) decreased to 10(12) cm-3. The carrier concentration obtained with TBP in the specular area of the InP epilayers was about 3.6 x 10(15) cm-3 at V:III ratios up to 33. The relation of V:III ratio to morphology and the distribution of visible phosphorus deposition on the reactor tube walls during growth indicated that the decomposition characteristics of PH, and TBP are considerably different in the inverted vertical reactor than in other system configurations. The decomposition characteristics observed here are empirically correlated with decomposition mechanism unique to the IV geometry.