Abstract:P-type doping of ultrawide-bandgap semiconductors, which are the key materials for fabrication of next-generation high-performance optoelectronic and electronic devices, is extremely difficult to achieve. The lack of p-type Ga2O3 has become a great obstacle to fabricate a full Ga2O3-based p-n homojunction for high-performance device applications. We demonstrate that N-doped beta-Ga2O3 achieved by a phase transition from GaN to beta-Ga2O3 possesses low formation energy and transition level epsilon(0/-), thereby with good N dopant solubility and low activation energy of N acceptors (0.355 eV). The delocalization effect, enhancement of valence band dispersion, and thus the decrease of the hole effective mass are predicted for N-doped beta-Ga2O3 due to the hybridization of O 2p with N 2p and Ga 4s orbitals. Activated hole concentrations of 6.1 x 10(15) and 2.1 x 10(16) cm(-3) at a valence band maximum are predicted for beta-Ga2O3:N-O(III) obtained by the nonspin and spin-polarized calculations, respectively. The hole mobility is 1.3 cm(2) V-1 s(-1) for undoped beta-Ga2O3 and remarkably increases to 8.8 and 5.5 cm(2) V-1 s(-1) for beta-Ga2O3:N-O(III) obtained by the non-spin and spin-polarized calculations, respectively. The origins for the unusual increase of hole mobility are attributed to the decrease of the hole effective mass, and reduction in acoustic deformation potential scattering and optical phonon scattering due to the weakening of electron-phonon coupling by N-induced phonon stiffening for beta-Ga2O3:N-O(III). The p-type conductivity of N-doped beta-Ga2O3 is demonstrated theoretically and also experimentally with a Hall hole concentration of 3.19 x 10(15) cm(-3) and a Hall hole mobility of 23.1 cm(2) V-1 s(-1) for N-doped beta-Ga2O3 films, and the p-type conductivity mechanisms are clarified. These studies will open a new horizon for other p-type wide bandgap oxide semiconductors.

Hole Concentration Test of P-Type GaN by Analyzing the Spectral Response of P–n+ Structure GaN Ultraviolet Photodetector

A Study on the Spectral Response of Back-Illuminated P-I-n AlGaN Heterojunction Ultraviolet Photodetector

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Effects of AlGaN Layer Parameter on Ultraviolet Response of N+-Gan/i-alxga1-xn/n+-gan Structure Ultraviolet-Infrared Photodetector

GaN-based Back-Illuminated Ultraviolet Photodetector with an Absorption Layer Compensation Doping

Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector

An Ultraviolet Photodetector Based On Gan/Si

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped -Ga<sub>2</sub>O<sub>3</sub> with high hole mobility

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Achievable Hole Concentration at Room Temperature As a Function of Mg Concentration for MOCVD-grown P-Gan after Sufficient Annealing

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Observation of Hole Accumulation at the Interface of an Undoped Ingan/Gan Heterostructure

The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer