Abstract:CuO nanowires are known to have excellent electrochemical properties and can be produced by various methods. Among them a method which directly heat either the Si wafer with Cu layer or pure copper plate so called the thermal oxidation method has lately been drawing attention. However, during its production, interfacial delamination between the Cu layer and the wafer has always been an issue. In this study, the mechanism of interfacial delamination was experimentally elucidated by comparing a Si wafer with Cu layer deposited by electron beam evaporation with a pure copper plate. As a result, it was found that the deposited Cu layer decreased with increasing heating time of the Si wafer production. Moreover, the disappearance of the Cu layer and Cu2O layer on the Si wafer was found in the specimens with a heating time of 6 hours. It was suggested that this disappearance would form an opening between the CuO layer and the Si wafer leading to the delaminating of the interface between the oxide film and the wafer. The disappearance also suggested that the length and density of the CuO nanowires in the specimens with a heating time of 6 hours were minimized. As for the pure copper plate, the disappearance of the Cu layer and Cu2O layer was not seen regardless of the heating time, therefore there was no interfacial delamination and it was able to produce CuO nanowires at a high density.

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Growth of CuO Nanowires on Si Substrate by Thermal Oxidation Method and Its Interfacial Delamination Mechanism.