A CMOS Readout Circuit for SOI Resonant Accelerometer with 4-μg bias stability and 20-μg/Hz 1/2 resolution A CMOS Readout Circuit for SOI Resonant Accelerometer with 4-μg bias stability and 20-μg/Hz 1/2 resolution

Lin He,Yong-Ping Xu,Moorthi Palaniapan,Yong Lin
2008-01-01
Abstract:The proposed readout circuit for SOI resonant accelerometer The proposed readout circuit for SOI resonant accelerometer A resonant accelerometer is a device that measures the frequency changes of sense elements under applied acceleration. A typical silicon resonant accelerometer has a proof mass and two sense resonators placed at opposite sides along the axis of acceleration. When it is subject to acceleration, the proof mass will axially loads the resonant beams and cause changes of resonant frequencies. The frequency difference between the two resonant beams is the measure of the acceleration. In this work, a complete SOI resonant accelerometer is designed and fabricated in a SOIMEM process and 0.35mm CMOS technology. The MEMS device and the readout circuit die are bonded on a PCB and connected through the bonding wire. (See Fig. below) The accelerometer has achieved a bias stability of 4 μg with resolution of 20μg/Hz1/2
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