Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Modeling the Impact of Process Variation on Critical Charge Distribution

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

An Efficient Method for Evaluating Analog Circuit Performance Bounds Under Process Variations.

Data Memory Subsystem Resilient to Process Variations

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Statistical Simulation of Self-Heating Induced Variability and Reliability with Application to Nanosheet-FETs Based SRAM

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

A novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations

On Modeling the Digital Gate Delay under Process Variation

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

A Comprehensive Model for Gate Delay under Process Variation and Different Driving and Loading Conditions

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model