Growth and Surface Structure of Ti-Doped CeO<sub><i>x</i></sub>(111) Thin Films

Yinghui Zhou,Jing Zhou
DOI: https://doi.org/10.1021/jz1004297
2010-01-01
Abstract:Well-ordered (111)-oriented ceria thin films with Ti dopant were prepared by simultaneous introduction of Ce and Ti onto Ru(0001) at 700 K with oxygen pressures higher than 2 x 10(-7) Torr. XPS data indicate that the incorporation of Ti in ceria causes the partial reduction of Ce from the +4 to +3 state. Ti is formally in the +3 state. The films are of high quality, consisting of flat terraces with surface features of ceria lattices, oxygen vacancies, as well as Ti dopants. Compared to pure ceria, Ti-doped ceria displays a large number of domain boundaries, which could be the result of the strain within the film due to the different Ce-O and Ti-O bond lengths. It is demonstrated that the modified structures of ceria by Ti dopant can significantly prevent the sintering of supported Au nanoparticles upon heating to higher temperatures.
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