Abstract:The ability to minimize the thermal conductivity of dielectrics with minimal structural intervention that could affect electrical properties is an important capability for engineering thermoelectric efficiency in low-cost materials such as Si. We recently reported the discovery of special arrangements for nanoscale pores in Si that produce a particularly large reduction in thermal conductivity accompanied by strongly anticorrelated heat current fluctuations, a phenomenon that is missed by the diffuse adiabatic boundary conditions conventionally used in numerical Boltzmann transport models. This manuscript presents the results of molecular dynamics simulations and a Monte Carlo ray tracing model that teases apart this phenomenon to reveal that special pore layouts elastically backscatter long-wavelength heat-carrying phonons. This means that heat carriage by a phonon before scattering is undone by the scattered phonon, resulting in an effective mean-free-path that is significantly shorter than the geometric line-of-sight to the pores. This effect is particularly noticeable for the long-wavelength, long mean-free-path phonons whose transport is impeded drastically more than is expected purely from the usual considerations of scattering defined by the distance between defects. This super-suppression of the mean-free-path below the characteristic length scale of the nanostructuring offers a route for minimizing thermal conductivity with minimal structural impact, while the stronger impact on long wavelengths offers possibilities for the design of band-pass phonon filtering. Moreover, the ray tracing model developed in this paper shows that different forms of correlated scattering imprint a unique signature in the heat current autocorrelation function that could be used as a diagnostic in other nanostructured systems.

Effect of phonon frequency on phonon scattering in isotope-doped Si

Effect of Atomic Mass of Dopants on Phonon Scattering in Si

Phonon scattering in doped silicon by molecular dynamics simulation

Phonon-Defect Scattering in Doped Silicon by Molecular Dynamics Simulation

Influence of Point Defects and Multiscale Pores on the Different Phonon Transport Regimes

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si

Effect of Electron-phonon Scattering on the Thermal Conductivity of Si Nanowires

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Electron-phonon Scattering Effect on the Lattice Thermal Conductivity of Silicon Nanostructures.

Interference, scattering, and transmission of acoustic phonons in Si phononic crystals

Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si

Thermal expansion and isotopic composition effects on lattice thermal conductivities of crystalline silicon

Isotope and Strain Effects on Thermal Conductivity of Silicon Thin Film

Phonon-bond strength imperfection scattering mechanism in nanostructures

Boundary Conditions Dictate Frequency Dependence of Thermal Conductivity in Silicon

A Detailed Study on Phonon Transport in Thin Silicon Membranes with Phononic Crystal Nanostructures

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium.