Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Boundary Conditions Dictate Frequency Dependence of Thermal Conductivity in Silicon

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Full-landscape selection rules of electrons and phonons and temperature-induced effects in 2D silicon and germanium allotropes

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Importance of frequency-dependent grain boundary scattering in nanocrystalline silicon and silicon-germanium thermoelectrics

Significant phase-space-driven thermal transport suppression in BC8 silicon

Phonon resonant effect in silicon membranes with different crystallographic orientations

Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys

Investigation On Interfacial Thermal Resistance And Phonon Scattering At Twist Boundary Of Silicon

Phonon Surface Scattering Controlled Length Dependence of Thermal Conductivity of Silicon Nanowires.

Analytical model for thermal boundary conductance based on elastic wave theory

Interference, scattering, and transmission of acoustic phonons in Si phononic crystals

Regulating interfacial thermal conductance with commensurate–incommensurate transitions at atomic-scale silicon/silicon interfaces

Spectral analysis of non-equilibrium molecular dynamics: spectral phonon temperature and phonon local non-equilibrium in thin films and across interfaces

Spin phonon interactions and magneto-thermal transport behavior in p-Si

Multiscale phonon thermal transport in nano-porous silicon

Thermal conductivity of silicon at elevated temperature: Role of four-phonon scattering and electronic heat conduction

On the importance of Akhiezer damping to thermal conductivity in silicon at elevated temperatures above 300 K