Abstract:Antiferromagnetic materials are expected to trigger the revolution of spintronic applications because they are robust against the perturbation of magnetic fields, produce no stray fields, and display ultrafast dynamics. To design antiferromagnetic devices, the generation and manipulation of spin-polarized current in antiferromagnetic materials are vital. Unfortunately, it has long been believed that spin-polarized current could not be achieved in collinear antiferromagnetic materials because of the symmetry of spin sublattices. Inspired by the possibility of breaking the symmetry using a bias voltage, a special Au/NiO/Au junction is proposed and constructed along the [111] direction of NiO using the collinear NiO antiferromagnetic insulator as a prototype. It was found that the symmetry of spin sublattices was broken by an external bias, which induces a nonequivalent transport for spin-up and spin-down currents, that is, the appearance of spin-polarized current. Unexpectedly, this study found that the magnitude and sign of spin polarization could be adjusted by varying the bias. A positive spin polarization up to 80% was obtained at ∼ 0.9 V, and the spin polarization turned negative when the bias voltage was beyond 1.6 V. The related physical mechanisms were explored and clarified by analyzing spin-resolved transmission, <i>k</i><sub>ǁ</sub>-resolved density of states, and layer-resolved local density of states of Au/NiO/Au, etc. The effects of NiO layer thicknesses, different electrodes, and interfacial disorders on the spin polarization were also analyzed and found to offer promising applications. This study provides new physical insight into spin-polarized current transport in collinear antiferromagnetic materials and greatly contributes to the development of novel antiferromagnetic spintronic devices.

Effect of Polarized Current on the Exchange Bias in A Current-In-Plane Spin Valve

Changing the Exchange Bias of Spin Valves by Means of Current Pulses: Role of the Joule Heating

Changing and Reversing the Exchange Bias in a Current-in-plane Spin Valve by Means of an Electric Current

Spin Torque-Driven Switching of Exchange Bias in A Spin Valve

Heat Generation by Electronic Current in a Quantum Dot Spin-Valve

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Huge Exchange-Coupling Field Observed in FeMn-pinned Spin Valve with Ultra-Thin Pinned NiFe Layer

Spin-Transfer Effect and Independence of Coercivity and Exchange Bias in A Layered Ferromagnet/Antiferromagnet System

Spin-dependent Seebeck effect in non-local spin valve devices

Tuning the Direction of Exchange Bias in Ferromagnetic/Antiferromagnetic Bilayer by Angular-Dependent Spin-Polarized Current

Bias dependence of magnetic exchange interactions: application to interlayer exchange coupling in spin valves

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Spin valve structures with double exchange biased fields

Bias current dependence of superconducting transition temperature in superconducting spin valve nanowires

Rectification of Spin-Bias-induced Charge Currents

Spin dependence scattering and spin-flip effect on the current-in-plane transport behavior in NiO-based-spin valve

High and reversible spin polarization in a collinear antiferromagnet

Magnetoresistance Effect of Heat Generation in A Single-Molecular Spin-Valve

Magnetic Field Effects on Quantum-Dot Spin Valves

Nonreciprocity of Electrically Excited Thermal Spin Signals in Cofeal-Cu-Py Lateral Spin Valves

Bias and Temperature Dependence of Hot Electron Transport in A Spin-Valve Structure