Preparation of n-ZnO/p-CuO Coaxial Nanocable Heterojunction and Its I-V Characteristic

PENG Wei,LI Jinchai

DOI: https://doi.org/10.14188/j.1671-8836.2013.03.001

2013-01-01

Abstract:n-ZnO/p-CuO coaxial nanocable heterojunctions were fabricated by a two-step method.The ZnO nanowires were first synthesized on silicon(100) substrates via a thermal vapor deposition route.Then the CuO shells with uniform,intensive and ultrafine CuO nanoparticles were prepared on the surfaces of ZnO nanowires using the ion beam sputtering technology combining thermal oxidation process.Scanning electron microscopy(SEM),X-ray diffraction(XRD),transmission electron microscopy(TEM)and high-resolution transmission electron microscopy(HRTEM) were used to study the morphology,composition and crystal structure of ZnO/CuO samples.The results indicate that the grown ZnO nanowires have Wurtzite single-crystalline structure and the CuO nanoshells display polycrystalline structure.The current-voltage(Ⅰ-Ⅴ) measurement based on the n-ZnO/p-CuO hetrojunctions showed an excellent typical semiconductor rectification characteristic.The n-ZnO/p-CuO coaxial nanocable heterojunctions,with large heterojunction area,large light illumination surface area and strong surface chemical activity,have promising applications in the fields of nano-rectifiers with high current density,solar cells,photosensitive devices and gas sensors.