Fabrication of CuO/ZnO Coaxial Nanowires Heterostructures and Quantum Dot Heterojunctions

Jinchai Li
2011-01-01
Abstract:CuO/ZnO quantum dot heterojunctions with different sizes and distribution density and CuO/ZnO coaxial nanowire heterostructures have successfully been synthesized by controlling the process parameters of ion beam sputtering and thermal oxidation technology.X-ray diffraction(XRD)and transmission electron microscopy(TEM) were used to study the structures and morphologies of CuO/ZnO samples.The results indicate that the thickness of sputtering Cu thin films plays an important role in the formation of CuO/ZnO heterostructure.The CuO quantum dots with a diameter of only 5 nm and high density of 2.05×1010 mm-2 have been obtained for a shorter sputtering time of 1 min.However,the CuO/ZnO coaxial nanowire heterostructure formed for a longer sputtering time of 10 min.The crystal structures at the interfaces of the quantum dot heterostructures and the coaxial nanowire heterostructures were also investigated using high resolution transmission electron microscopy.
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