Abstract:Recently much attention has been paid to short wavelength lasers for use in high density information storage. It is widely accepted that ZnO is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap (E_g=3.37 eV) and large excitonic binding energy of 60 meV. It has potential uses in optoelectronical systems such as light emitting diodes(LEDs), photodetectors, electroluminecence devices and solar cells. To obtain high quality ZnO thin films a variety of techniques may be used such as molecular beam epitaxy(MBE), metal organic chemical vapor deposition(MOCVD), magnetron sputtering, pulsed laser deposition, and so on. Among them, MOCVD provides the advantage of growing high-quality films due to its versatility in controlling the various thermodynamic interactions. ZnO has not only the same crystal structure as GaN, but also a larger exciton binding energy of 60 meV, which is 2.4 times that of GaN. This indicates that ZnO should be the most potential material to realize the next generation UV semiconductor laser. High quality ZnO films were deposited on c-Al_2O_3 substrate by the plasma-assisted metal-organic chemical vapor deposition. Strong optically pumped ultraviolet (UV) emission was observed. PL spectra under different excitation powers were performed. The PL intensity as a function of the excitation power, it is obvious that the PL intensity is linearly dependent on the excitation power. This indicates that the dominant photoluminescence of the sample should be the excitonic radiative recombination at room temperature.Optically pumped UV lasing spectrum of ZnO film was observed. The samples were optically pumped by a frequency-tripled mode-locked Nd∶YAG laser 355 nm emission, with 10 Hz repetition rate, and 15 ps pulse width. The pump beam was focused to a spot with diameter of about 25 μm on the surface of ZnO film. The threshold of lasing was as low as 0.28 μJ. From the lasing spectrum, we could find that the lasing peak has much narrow line-width less than 0.03 nm. In this paper, high quality ZnO films were grown on c-Al_2O_3 by MOCVD. Optimized growth condition was obtained by XRD and PL measurements. ZnO films were strongly c-oriented from XRD measurement. Optically pumped UV lasing was observed in all kinds of directions at room temperature. This was due to the self-formed resonance cavities.

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Localized Exciton Emission from ZnO Nanocrystalline Films

Optically Pumped Ultraviolet Lasing Property of ZnO Film

Infrared Femtosecond Laser-Induced Great Enhancement of Ultraviolet Luminescence of ZnO Two-Dimensional Nanostructures

Identification of Defect-Related Emissions in ZnO Hybrid Materials

Strong Ultraviolet Emission and Rectifying Behavior of Nanocrystalline ZnO Films

Room Temperature Growth and Properties of ZnO Films by Pulsed Laser Deposition

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

Dominant Free Exciton Emission in ZnO Nanorods

Resonant Raman scattering and photoluminescence from high-quality nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition

Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

Investigation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Correlation Between Structure and Photoluminescence of C-Axis Oriented Nanocrystalline ZnO Films and Evolution of Photo-Generated Excitons

Optical properties of ultrathin ZnO films fabricated by atomic layer deposition