Adhesion, Stability and Electronic Properties of Ag/SnO2 Interface from First‐Principles Calculation
Yunhui Xu,Jintao Li,Wensong Teng,Defeng Cui,Xiaolong Zhou
DOI: https://doi.org/10.1002/crat.202400126
2024-08-24
Crystal Research and Technology
Abstract:The surface energy of 19 layers with SnO2(110)‐O at the end is low and the interface is the most stable. We mainly studied the interface energy, electronic properties and microstructure of Ag (111)/SnO2(110)‐O interface. The Ag(111)/SnO2(110)‐O interface has high stability and interface bonding strength, and has good metal properties and electrical conductivity. In addition, the Ag/SnO2 interface mainly relies on ionic bonding, and the interface part is well combined. The interfacial bonding state between each oxide and the silver matrix in AgCuOIn2O3SnO2 electrical contact materials remains unclear. To address this, first‐principles calculations using density‐functional theory are employed to establish the low‐index surfaces of Ag and SnO2 and perform convergence tests. Computational results reveal that the Ag (111) surface and the SnO2(110)‐O surface exhibit the highest stability among their respective low‐index surfaces. Consequently, these surfaces are chosen to form the interfacial model, and their atomic structure, adhesion work, and interfacial energies are systematically analyzed. The results demonstrate that the stability and interfacial bonding strength of the Ag(111)/SnO2(110)‐O interface are high, exhibiting metallic properties and strong conductivity. Moreover, at an interface spacing of d0 = 2.4 Å, the interface stability is optimal. The redistribution of charge at the interface induces significant changes in the local atomic density of states, particularly noticeable in the Ag and O atoms. Additionally, the Ag/SnO2 interface is predominantly bonded through ionic interactions, contributing to its robust bonding.
crystallography