High‐temperature Infrared and Dielectric Properties of Large Sapphire Crystal for Seeker Dome Application
Guigen Wang,Mingfu Zhang,Jiecai Han,Xiaodong He,Hongbo Zuo,Xinhong Yang
DOI: https://doi.org/10.1002/crat.200711066
2008-01-01
Crystal Research and Technology
Abstract:In this paper, large-sized (0230 mm x 210 mm, 27.5 kg) sapphire was successfully grown by SAPMAC (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center) method; and hemisphere dome (140 mm diameter, 5 mm thickness) was fabricated from as-grown boule. Also, its high temperature infrared transmission (2 similar to 7 mu m, 20-800 degrees C) and microwave dielectric properties (8-16.5 GHz, 30-1300 degrees C) were investigated. The experimental results show that sapphire crystal exhibits high infrared transmittance (3 mu m, 80-86%), essentially negligible dielectric loss (4.9 x 10(-5) -3.7 x 10(-4)), but fairly high dielectric constants (epsilon= 9.4-12.5) in the temperature range of 30-1300 degrees C. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.