Abstract:Silicon is not known to create color centers in sapphire. In a blue sapphire, the coloring mechanism is well known to be the charge transfer between Fe2+ Ti4+ pairs on neighboring sites in the lattice [1]. However, beryllium diffusion treatment in sapphire has forced us to examine the role of unusual noncoloring trace elements such as silicon. Emmett et al. [2] proposed that the difference between [Mg2+ + Be2+] and [Ti4+ + Si4+] concentrations directly affects the resulting color in a beryllium-diffused sapphire. LA-ICP-QMS (Laser ablation – inductively couple plasma – quadrupole mass spectrometry) has gained popularity among the gemological laboratories; therefore, the detectability of these non-coloring trace elements is an important issue. Among the elements in Emmett’s model, silicon is the most challenging to analyze by ICPMS due to its omnipresence in the environment and isobaric interference. A series of experiments using single crystal synthetic and natural sapphires were performed to establish the detection limits and isobaric interferences of silicon isotopes while using LA-ICP-QMS. Three multiplyrecrystallized synthetic sapphire crystals were used as ‘true blanks’ in these experiments and additional matrix related interferences were observed in 28Si and 29Si signals. Preliminary results indicated that, under ideal situation, a detection limit in the order of 100 ppmw is achievable. However, extreme caution is called due to lack of reference standards. The most commonly used NIST SRM glasses contains 32 – 33 wt % of silicon – well into analog mode operation of the multiplier and interpolating such calibration to less than 100 ppm range can introduce dramatic errors. This is still a on-going project and the most up-to-date results will be discussed.

The Spectra And Color Centers Of Large Sapphire Crystal

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

Temperature Field Design, Process Analysis and Control of SAPMAC Method for the Growth of Large Size Sapphire Crystals

Study on the technology of large size sapphire single crystal growth by SAPMAC

Temperature Field Design, Process Analysis And Control Of Sapphire Crystals By Sapmac Method

Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

High‐temperature Infrared and Dielectric Properties of Large Sapphire Crystal for Seeker Dome Application

Synchrotron X‐ray Diffraction Studies of Large Sapphire Crystal Grown by Kyropoulos‐like Method

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

Growth, quality inspection and ultrasonic vibration cutting of large size sapphire grown by SAPMAC method

Growth and optical properties of single-crystal sapphire fibers for a high temperature sensor and power transmission

Germanium / silicon ratios of diagenetic chert nodules in the Ediacaran Doushantuo Formation , South China

Cathodo-luminescence of color centers induced in sapphire and yttria-stabilized zirconia by high-energy electrons

Haze in Sapphire Crystals Grown by Sapmac Method

Thermoluminescence and Optical Stimulated Luminescence Studies of Sapphire

Reversible photochromic effect in natural gemstone sapphires.

Effect of Sapphire Thermal Performance Anisotropy on Crystal Growth by SAPMAC Method

The Covariation of Color and Orange Fluorescence Instabilities in Yellow Sapphires

Enabling cryogenic gravitational wave detectors: growth of sapphire crystals with record low absorption in the near infrared

Investigation on the Origin of the Blue Emission in Titanium-Doped Sapphire - is F+ Color-Center the Blue Emission Center