Abstract:Global simulation is performed to predict electromagnetic field, heat transfer, melt flow, and interface shape during the different growth stages of sapphire crystal by RF-heated Czochralski (Cz) process. Melt flow in the Cz-sapphire growth system includes Marangoni convection due to the variation of surface tension at the free surface, natural convection due to the complex thermal boundary conditions on the crucible walls, and forced convection due to the crystal rotation. As the crystal grow longer, the effects of the convections on the melt flow, temperature distribution and interface shape varies due to the drop of melt, which can be characterized by Grashof number (Gr) with the melt height as the characteristic length. It is found that as melt height reduces, natural convection gets weaker, and the interface becomes flatter. To examine systematically the effects of the convections on the crystal growth process, three dimensionless parameters, Nσ, Gr/Re2 and Nσ2, are further introduced. Nσ denotes the influence of surface tension in the boundary layer as compared with buoyancy in the melt, Gr/Re2 is the ratio of convective forces to the normalizing convective velocities with viscosity, and Nσ2 represents the relative strength of Marangoni flow to forced convection. The effects of the parameters on the melt flow and heat transfer are examined, and their relationships to the interface convexities are obtained. The understanding of melt convection and interface shape is not only important for the optimization of a stable sapphire crystal growth, but also critical for an accurate modeling of the growth process.

Numerical Simulation of the Sapphire Growth Process Using a Self-Regulating Thermal Boundary Condition Method

Numerical Simulation of Thermophysical Performance's Effect on Sapphire Crystal Growth with SAPMAC Method

Numerical study of heat transfer during sapphire crystal growth by heat exchanger method

Temperature Field Design, Process Analysis and Control of SAPMAC Method for the Growth of Large Size Sapphire Crystals

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Numerical Simulation of Heat Dissipation Parameters' Effect on Sapphire Crystal Growth with SAPMAC Method

Numerical Simulation of Environmental Parameters' Effect on Sapphire Crystal Growth with GOI Method

Study of Melt Convection and Interface Shape During Sapphire Crystal Growth by Czochralski Method

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

The Simulation of the Stress Distribution in Sapphire Crystal Grouth Progres

Numerical Study of the Micro-Pulling-Down Process for Sapphire Fiber Crystal Growth†

Numerical Simulation of Heater Temperature Effect on Sapphire Crystal Growth with GOI Method

3D Numerical Investigation and Improvement to the Design of the Thermal Field Before Seeding in a Multi-Die Edge-Defined Film-Fed Growth System for Sapphire Ribbon Crystals

Effect of Sapphire Thermal Performance Anisotropy on Crystal Growth by SAPMAC Method

Temperature Field Design, Process Analysis And Control Of Sapphire Crystals By Sapmac Method

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

Sapphire Crystal Growth and Solid–liquid Interface Structure: an Investigation by Molecular Dynamic Simulation and Czochralski Growth

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

Numerical Optimization of Czochralski Sapphire Single Crystal Growth Using Orthogonal Design Method

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method