Abstract:The optimized growth conditions for high density germanium (Ge) nanowires and P-doped Ge nanowires on Si (111) substrate were investigated, the phosphorus (P)-doping in Ge nanowires was also characterized. Vapor liquid solid-low pressure chemical vapor deposition (VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst, different flow rates of GeH4 as precursor and PH3/Ar as co-flow. The morphologies of the Ge nanowires were characterized by scanning electron microscopy (SEM), the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak (342-345 cm-1) and asymmetric broadening of Ge-Ge vibrational peak (about 300 cm-1), respectively. The characterization results show that 1 nm thickness of Au catalyst is the most suitable condition among thicknesses of 0.1, 1, 5, and 10 nm for the growth of high density Ge nanowires at 300 and 350 °C, and 0.5 sccm is the best flow rate of PH3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5, 1 and 2 sccm. The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 °C.

Preparation and Raman Spectroscopy of GeO2 Nanowires

Vapor phase growth and photoluminescence of oriented-attachment Zn2GeO4 nanorods array

Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Characterization and growth mechanism of germanium nitride nanowires prepared by an oxide-assisted method

P-doped Germanium Nanowires with Fano-broadening in Raman Spectrum

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Synthesis and Characterization of Nano/micro-Structured Crystalline Germanium Dioxide with Novel Morphology

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Synthesis and Raman Spectra of Si-Nanowires

Preparation, characterization and formation mechanism of gallium oxide nanowires

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Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

Synthesis and Raman spectroscopic study of W<sub>20</sub>O<sub>58</sub> nanowires

Ga2O3 nanowires grown on GaN–Ga2O3 core–shell nanoparticles using a new method: Structure, morphology, and composition

Synthesis and Photoluminescence of Ultralong Amorphous SiO2 Nanowires Catalysed by Germanium

Synthesis and Optical Properties of Germanium Nanorod Array Fabricated on Porous Anodic Alumina and Si-Based Templates

Microstructure and Micro-Raman Studies of Nitridation and Structure Transition of Gallium Oxide Nanowires

Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization and Langmuir-Blodgett Assembly

Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes