Self-assembled Sn nanoplatelets on Si(111)-2 √ 3 × 2 √ 3-Sn surfaces

IOP PUBLISHING,Quantong Shen,Wenjuan Li,Guocai Dong,Guofeng Sun,Yujie Sun,Xucun Ma,Jinfeng Jia,Qikun Xue

2009-01-01

Abstract:Room temperature growth of Sn on Sn-induced Si(1 1 1)-2 √ 3 × 2 √ 3 surfaces is investigated

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Self-assembled Sn nanoplatelets on Si(111)-2 32 3-Sn surfaces

Quantong Shen,Wenjuan Li,Guocai Dong,Guofeng Sun,Yujie Sun,Xucun Ma,Jinfeng Jia,Qikun Xue

2008-01-01

Abstract:Room temperature growth of Sn on Sn-induced Si(1 1 1)-2 √ 3 × 2√3 surfaces is investigated by scanning tunneling microscopy. On the Si(1 1 1)-2 √ 3 × 2√3-Sn surfaces, uniform arrays of hexagonal Sn nanoplatelets with narrow lateral size distribution are obtained. The experimental data show that the preferred lateral island size varies with Sn coverage. This variation can be explained in terms of island–island interactions. As a result of quantum size effects, the Sn islands exhibit preferred heights. (Some figures in this article are in colour only in the electronic version)
Self-assembled Sn nanoplatelets on Si(1 1 1)-2√ 3 × 2√ 3 -Sn surfaces

QuanTong Shen,WenJuan Li,GuoCai Dong,GuoFeng Sun,YuJie Sun,Xucun Ma.,Jinfeng Jia,Qikun Xue

DOI: https://doi.org/10.1088/0022-3727/42/1/015305

2009-01-01

Abstract:Room temperature growth of Sn on Sn-induced Si(1 1 1)-2 root 3 x 2 root 3 surfaces is investigated by scanning tunneling microscopy. On the Si(1 1 1)-2 root 3 x 2 root 3-Sn surfaces, uniform arrays of hexagonal Sn nanoplatelets with narrow lateral size distribution are obtained. The experimental data show that the preferred lateral island size varies with Sn coverage. This variation can be explained in terms of island-island interactions. As a result of quantum size effects, the Sn islands exhibit preferred heights.
Self-assembled Sn nanoplatelets on Si(1 11)-2V3 x 2√3-Sn surfaces

Quan-Tong Shen,Wen-Juan Li,Guo-Cai Dong,Guofeng Sun,Yu-Jie Sun,Xucun Ma,Jin-Feng Jia,Qi-Kun Xue

2009-01-01

Abstract:Room temperature growth of Sn on Sn-induced Si(1 1 1)-2√3 x 2√3 surfaces is investigated by scanning tunneling microscopy. On the Si(1 11)-2√3 x 2√3-Sn surfaces, uniform arrays of hexagonal Sn nanoplatelets with narrow lateral size distribution are obtained. The experimental data show that the preferred lateral island size varies with Sn coverage. This variation can be explained in terms of island-island interactions. As a result of quantum size effects, the Sn islands exhibit preferred heights.
Self-assembled Sn Nanoplatelets on Si(1 1 1)- 2\sqrt 3 \times 2\sqrt 3 -Sn Surfaces

Quantong Shen,Wenjuan Li,Guocai Dong,Guofeng Sun,Yujie Sun,Xucun Ma,Jinfeng Jia,Qikun Xue

DOI: https://doi.org/10.1088/0022-3727/42/1/015305

2008-01-01

Journal of Physics D Applied Physics

Abstract:Room temperature growth of Sn on Sn-induced Si(1 1 1)- surfaces is investigated by scanning tunneling microscopy. On the Si(1 1 1)- -Sn surfaces, uniform arrays of hexagonal Sn nanoplatelets with narrow lateral size distribution are obtained. The experimental data show that the preferred lateral island size varies with Sn coverage. This variation can be explained in terms of island–island interactions. As a result of quantum size effects, the Sn islands exhibit preferred heights.
Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Liming Wang,Yichi Zhang,Hao Sun,Jie You,Yuanhao Miao,Zuoru Dong,Tao Liu,Zuimin Jiang,Huiyong Hu

DOI: https://doi.org/10.1039/d0na00680g

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:Here, SiGeSn nanostructures were grown via molecular beam epitaxy on a Si (111) substrate with the assistance of Sn droplets. Owing to the thermal effect and the compressive strain induced by a lattice mismatch, Si and Sn atoms were successfully incorporated into the Ge matrix during the Sn-guided Ge deposition process. A low growth temperature of 350 °C produced a variety of SiGeSn nanostructures of different sizes, attributed to the variation of the initial Sn droplet size. Using energy-dispersive X-ray spectroscopy, the Sn, Si and Ge contents of a defect-free SiGeSn nanoisland were approximately determined to be 0.05, 0.09 and 0.86, respectively. Furthermore, as the growth temperature increased past 600 °C, the growth direction of the nanostructure was changed thermally from out-of-plane to in-plane. Meanwhile, the stacked SiGeSn nanowires grown along the 〈112〉 direction remained defect-free, though some threading dislocations were observed in the smooth SiGeSn nanowires along the 〈110〉 direction. These results offer a novel method to grow Si-based SiGeSn nanostructures while possessing important implications for fabricating further optoelectronic devices.
Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

L. L. Wang,X. C.,Shuai‐Hua Ji,Ying‐Shuang Fu,Quantong Shen,Jinfeng Jia,Kevin F. Kelly,Qi‐Kun Xue

DOI: https://doi.org/10.1103/physrevb.77.205410

2008-01-01

Abstract:Surface morphologies and electronic structures of Sn thin films prepared on Si(111)-$\text{Sn}(2\sqrt{3}\ifmmode\times\else\texttimes\fi{}2\sqrt{3})$ $R30\ifmmode^\circ\else\textdegree\fi{}$ substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski--Krastanov growth is observed at various growth temperatures (95--300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from $\ensuremath{\alpha}\text{-Sn}$ to $\ensuremath{\beta}\text{-Sn}$ occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for $n$- and $p$-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.
Growth and Magnetism of Self‐organized Co Nanoplatelets on Si(111) Surface

Ke He,Ming-Hu Pan,Jun-Zhong Wang,Hong Liu,Jin-Feng Jia,Qi-Kun Xue

DOI: https://doi.org/10.1002/sia.2338

2006-01-01

Surface and Interface Analysis

Abstract:Magnetic nanodots have great potential for applications in ultrahigh-density information storage, quantum computing and many other fields. In this work, Co nanoplatelets with uniform size, height and shape were fabricated by ultrahigh vacuum metal evaporation on the Si(111)-(7 x 7) surface, using a two-dimensional identical Al cluster array as the template and spacer. The Al clusters reduce Si dangling bonds significantly and prevent the reaction between Si and the ferromagnetic metal Co. Almost all Co nanoplatelets appear as equilateral triangles with a side length of 5.4 nm and a magic thickness of 2 ML, pointing in the [211] direction. In situ scanning tunneling microscopy (STM) was used to determine the atomic structure and atomistic formation process of the Co nanoplatelets. Magnetic properties of the Co platelets were measured by SQUID at 5 K. Such quantum dots exhibit unusually high perpendicular magnetic anisotropy. The present study demonstrates a promising pathway to directly integrate magnetic nanostructures with Si-based electronic devices. Copyright (C) 2006 John Wiley & Sons, Ltd.
Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Bin Lu,Wende Xiao,Sunil Singh Kushvaha,Pimo He,Xue-Sen Wang

DOI: https://doi.org/10.1088/0953-8984/20/22/225015

2008-01-01

Journal of Physics Condensed Matter

Abstract:Using in situ scanning tunneling microscopy and low-energy electron diffraction, we performed investigations on the growth of zirconium silicide on vicinal and flat Si(111)-7 x 7 surfaces. In the case of a solid-phase reaction, submonolayer zirconium deposition onto vicinal Si followed by successive annealing results in the formation of zirconium silicide nanostructures, which are distributed randomly on the surface. These nanostructures evolved into rod-shaped islands with axes running along the substrate <(1) over bar 10 > directions at the late stage of the coarsening process. When 2-3 monolayers of Zr are deposited on Si at 520 degrees C, an extended network with rod-like silicide domains was developed, which is controlled by the elastic strain-relief mechanism. The atomic structures of these silicide features were identified and they are considered to adopt C49 ZrSi2. The reaction and growth on a flat surface with less Zr coverage at higher temperatures led to the formation of longer and narrower nanowires. The relations between the variety of nanostructures and the different growth conditions are addressed.
Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

L. L. Wang,X. C. Ma,S. H. Ji,Y. S. Fu,Q. T. Shen,J. F. Jia,K. F. Kelly,Q. K. Xue

DOI: https://doi.org/10.1103/physrevb.77.205410

IF: 3.7

2008-01-01

Physical Review B

Abstract:Surface morphologies and electronic structures of Sri thin films prepared on Si(111)-Sn(2 root 3x2 root 3) R30 degrees substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski-Krastanov growth is observed at various growth temperatures (95-300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from alpha-Sn to beta-Sn occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sri islands. Upon room temperature annealing, the as-deposited Sri islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for n- and p-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.
Columnar self-assembly of Cu2S hexagonal nanoplates induced by tin(IV)-X complex as inorganic surface ligand.

Xiaomin Li,Huaibin Shen,Jinzhong Niu,Sen Li,Yongguang Zhang,Hongzhe Wang,Lin Song Li

DOI: https://doi.org/10.1021/ja103955s

IF: 15

2010-01-01

Journal of the American Chemical Society

Abstract:We have prepared columnar self-assembled Cu2S hexagonal nanoplates induced by a Sn-X complex for the first time and demonstrated that the Sn-X complex can affect not only the morphology of the nanocrystals but also the self-assembly ability of the nanocrystals.
Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

A.S. Petrov,D.I. Rogilo,A.I. Vergules,V.G. Mansurov,D.V. Sheglov,A.V. Latyshev

DOI: https://doi.org/10.1016/j.susc.2023.122418

IF: 1.9

2023-11-10

Surface Science

Abstract:We have studied Si mass transport and morphological transformations on the Si(111) surface during (√3 × √3)-Sn reconstruction formation and following Si homoepitaxy in 600–825°C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). We have shown that the formation of a metallic α-(√3 × √3)-Sn phase during Sn deposition at T 1 μm terraces, while the formation of a mosaic γ-(√3 × √3)-Sn phase at T > 650 °С is followed by monatomic step shift in the step-up direction and provides Sn/Si(111) interface with wide atomically flat terraces. The step shift value has been measured as functions of substrate temperature and Sn deposition rate to determine emitted by the steps Si coverage participating in γ-phase formation. The electromigration-induced drift of disordered "1 × 1"-Sn domains has been shown to entail enhanced noncompensated Si mass transport followed by the Si(111)-(√3 × √3)-Sn surface roughening. The kinetics of 2D island nucleation and growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(111)-γ-(√3 × √3)-Sn surface during Si deposition at 700°C is limited by surface diffusion only, and critical nucleus i consists of ∼ 20–100 Si atoms.

chemistry, physical,physics, condensed matter
First-principles study of the topological surface states of -Sn(111)

Zhibin Shi,Xiaoxiong Wang,Caizhi Xu,Peng Wang,Yang Liu,T-C Chiang

DOI: https://doi.org/10.1016/j.physleta.2020.126782

IF: 2.707

2020-01-01

Physics Letters A

Abstract:alpha-Sn is on the boundary of a couple of distinct topological phases. It will transform into a topological insulator under a suitable strain. However, a clear picture of its topological surface states (TSSs) is still lacking. Here we perform first-principles calculations on the electronic structure of alpha-Sn(111) surface to identify its TSSs and reveal their properties. The results show that the presence of valence band reorganizes the TSSs in the inverted sp gap into two Dirac cones. The lower one is in the valence band continuum; the upper one resides in the gap between the valence and conduction bands. We also demonstrate the transformation of the surface states by switching on or off of strain and/or spinorbit coupling. Without spin-orbit coupling, only the TSSs associated with the lower Dirac cone survive, and they are spin unpolarized. The results are useful for understanding and engineering the topological properties of alpha-Sn. (C) 2020 Elsevier B.V. All rights reserved.
Self-Assembly of Gold Nanoparticles on Nanometre-Patterned Surface

YJ Zhang,JH Yang,W Li,Y Zhang,L Xu,J Xu,XF Huang,KJ Chen

DOI: https://doi.org/10.1088/0256-307x/22/12/042

2005-01-01

Abstract:The self-assembly processes of gold nanoparticles on nanometre-step-patterned Si surface and polished Si surface are investigated by the convective self-assembly method. The convective self-assembly method is used to deposit the colloids dispersed in benzene onto the substrates. The SEM results show that the configurations of the gold arrays depend on the surface morphology of the substrates. On the nanometre-step-patterned Si surface, the nanoparticles self assemble into parallel lines, and the distance between the neighbouring lines is around 35 nm. On the polished Si surface the nanoparticles form compact domains. In each domain the particles are close-packed in a two-dimensional hexagonal superlattice and are separated by uniform distances. The analysis shows that on the nanometre-step-patterned Si surface, the steps play critical roles in the self-assembly process of gold nanoparticles. The capillary force from the steps drives the particles to lines along the steps. Therefore, the particles tend to self-assemble into one-dimensional line structures when the solvent evaporates. For the polished Si substrate there is a little difference that the particles form two-dimensional hexagonal superlattices without the directional confinement.
Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si ( 111 )-( 2 3 Ã 2 3 ) R 30 ° surface

L. L. Wang,X. C. Ma,S. H. Ji,Y. S. Fu,Q. T. Shen,J. F. Jia,K. F. Kelly,Q. K. Xue

2008-01-01

Abstract:L. L. Wang,1,2 X. C. Ma,1,* S. H. Ji,1 Y. S. Fu,1 Q. T. Shen,1 J. F. Jia,3 K. F. Kelly,2 and Q. K. Xue3,1 1Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People’s Republic of China 2Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA 3Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China Received 10 October 2007; revised manuscript received 1 February 2008; published 9 May 2008
Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings

Rui Wu,Yi Zhang,Feng Pan,Li-Li Wang,Xu-Cun Ma,Jin-Feng Jia,Qi-Kun Xue

DOI: https://doi.org/10.1002/adma.200901063

IF: 29.4

2009-01-01

Advanced Materials

Abstract:A template-directed growth method for metals is described in which ordered arrays of super-long single-crystalline metal nanowires with atomic-level-controlled width, thickness (height), and surface location are prepared by molecular beam epitaxy. Their subsequent examination by in situ scanning tunneling microscopy is also outlined. A phase-separated stripe pattern composed of alternately a Ge-rich incommensurate phase and a root 3 x root 3 phase is first obtained by Ge deposition on Si(111) substrates. Further deposition of Pb on this patterned surface leads to a well-ordered array of super-long Pb nanowires. Using the same mechanism, superconducting Pb nanorings can also be fabricated. In this review of our recent work, these Pb single-crystalline nanowires and nanorings are shown to serve as an ideal platform for the study of superconductivity in reduced dimensionalities. Furthermore, because the widths and spatial distributions of two phases can be precisely controlled by the Ge coverage and substrate temperature, and because a metal will always selectively nucleate on one of two phases, this template-directed growth method can be applied to a wide range of metals.
Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

L. L. Wang,X. C. Ma,Y. X. Ning,S. H. Ji,Y. S. Fu,J. F. Jia,K. F. Kelly,Q. K. Xue

2009-01-01

Abstract:Surface structure of the Sn islands 5 ML high, prepared on Si(111)-(23×23)-Sn substrate, is investigated by low temperature scanning tunneling microscopy/spectroscopy. Due to the elastic strain relaxation in the islands, the in-plane unit cell structure distorts and the apparent height of the surface atoms varies regularly to form an overall modulated strip structure. The quantum well states are observed to depend on the relative position within this structure, which implies the change of the surface chemical potential induced by the elastic strain relaxation as well.
Micrometer-sized Si-Sn-O Novel Structures with SiONWs on Their Surfaces

S.H. Sun,G.W. Meng,T. Gao,M.G. Zhang,Y.T. Tian,X.S. Peng,Y.X. Jin,L.D. Zhang

DOI: https://doi.org/10.1007/s00339-002-1996-1

2003-01-01

Abstract:Novel micrometer-sized Si-Sn-O structures with SiO2 nanowires (SiONWs) growing from their surfaces have been achieved at about 980 °C on Si (111) wafer catalyzed by Sn vapor generated from Sn powders. The Si wafer itself served as a silicon source in the reaction. The micrometer-sized structures, with diameters of several micrometers to several tens of micrometers consisted of Sn, Si and O. The amorphous SiONWs growing from the surface of the micrometer-sized structures were smooth, with diameters about 120 nm and with a composition close to that of SiO2. The growth mechanism of these novel structures is discussed briefly.
Self-assembly: Served on a nanoplate.

Chunhua Cai,Jiaping Lin

DOI: https://doi.org/10.1038/nchem.2071

IF: 24.274

2014-01-01

Nature Chemistry

Abstract:Download references
Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Jie Shen,Yeonwoong Jung,Ankit S. Disa,Fred J. Walker,Charles H. Ahn,Judy J. Cha

DOI: https://doi.org/10.48550/arXiv.1406.5227

2014-06-19

Mesoscale and Nanoscale Physics

Abstract:SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with lateral dimensions spanning tens of microns and thicknesses of a hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high temperature rock salt to low temperature rhombohedral structure. For nanoplates with very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions.
Growth of Porous Ag@AuCu Trimetal Nanoplates Assisted by Self-Assembly

Wan-Cheng Zhang,Meng-Dai Luoshan,Peng-Fei Wang,Chu-Yun Huang,Qu-Quan Wang,Si-Jing Ding,Li Zhou

DOI: https://doi.org/10.3390/nano10112207

IF: 5.3

2020-11-05

Nanomaterials

Abstract:The self-assembly process of metal nanoparticles has aroused wide attention due to its low cost and simplicity. However, most of the recently reported self-assembly systems only involve two or fewer metals. Herein, we first report a successful synthesis of self-assembled Ag@AuCu trimetal nanoplates in aqueous solution. The building blocks of multibranched AuCu alloy nanocrystals were first synthesized by a chemical reduction method. The growth of Ag onto the AuCu nanocrystals in the presence of hexadecyltrimethylammonium chloride (CTAC) induces a self-assembly process and formation of Ag@AuCu trimetal nanoplates. These nanoplates with an average side length of over 2 μm show a porous morphology and a very clear boundary with the branches of the as-prepared AuCu alloy nanocrystals extending out. The shape and density of the Ag@AuCu trimetal nanoplates can be controlled by changing the reaction time and the concentration of silver nitrate. The as-assembled Ag@AuCu nanoplates are expected to have the potential for wide-ranging applications in surface-enhanced Raman scattering (SERS) and catalysis owing to their unique structures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

Self-assembled Sn nanoplatelets on Si(111)-2 √ 3 × 2 √ 3-Sn surfaces

Self-assembled Sn nanoplatelets on Si(111)-2 32 3-Sn surfaces

Self-assembled Sn nanoplatelets on Si(1 1 1)-2√ 3 × 2√ 3 -Sn surfaces

Self-assembled Sn nanoplatelets on Si(1 11)-2V3 x 2√3-Sn surfaces

Self-assembled Sn Nanoplatelets on Si(1 1 1)- 2\sqrt 3 \times 2\sqrt 3 -Sn Surfaces

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

Growth and Magnetism of Self‐organized Co Nanoplatelets on Si(111) Surface

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Columnar self-assembly of Cu2S hexagonal nanoplates induced by tin(IV)-X complex as inorganic surface ligand.

Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

First-principles study of the topological surface states of -Sn(111)

Self-Assembly of Gold Nanoparticles on Nanometre-Patterned Surface

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si ( 111 )-( 2 3 Ã 2 3 ) R 30 ° surface

Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

Micrometer-sized Si-Sn-O Novel Structures with SiONWs on Their Surfaces

Self-assembly: Served on a nanoplate.

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Growth of Porous Ag@AuCu Trimetal Nanoplates Assisted by Self-Assembly