Micrometer-sized Si-Sn-O Novel Structures with SiONWs on Their Surfaces

S.H. Sun,G.W. Meng,T. Gao,M.G. Zhang,Y.T. Tian,X.S. Peng,Y.X. Jin,L.D. Zhang
DOI: https://doi.org/10.1007/s00339-002-1996-1
2003-01-01
Abstract:Novel micrometer-sized Si-Sn-O structures with SiO2 nanowires (SiONWs) growing from their surfaces have been achieved at about 980 °C on Si (111) wafer catalyzed by Sn vapor generated from Sn powders. The Si wafer itself served as a silicon source in the reaction. The micrometer-sized structures, with diameters of several micrometers to several tens of micrometers consisted of Sn, Si and O. The amorphous SiONWs growing from the surface of the micrometer-sized structures were smooth, with diameters about 120 nm and with a composition close to that of SiO2. The growth mechanism of these novel structures is discussed briefly.
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