Abstract:The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar+ ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.

K promoted oxidation and nitridation on InP(100) surface: A soft-X-ray photoemission study

Photoemission Studies of K-Promoted Nitridation of InP(100) Surface Using Synchrotron Radiation

Synchrotron radiation photoemission study of potassium-promoted oxidation of InP(100) surface

Promoted oxidation of Rb on InP (100) surface

Study on influence of Na on nitridation of InP (100) surface at room temperature by synchrotron radiation photoemission spectroscopy

Nitridation of InP(1 0 0) surface studied by synchrotron radiation

Photoemission study of K on GaAs(100) and InP(100) surfaces with synchrotron radiation

A LEED, ELS Study of InP(100) Surfaces Prepared by Phosphorus Deposition and Post-Annealing

In Situ Passivation of Inp Surface Using H2s During Metal Organic Vapor Phase Epitaxy

Structural Properties of InN on PbTiO 3 (111) Surfaces

Study of Cr overlayer on InP(100) by synchrotron radiation photoemission

NITRIDATION OF K/GaAs(100) SURFACES

The Surface Passivation on the Optical and Surface Properties of InP

Effect of Al2O3 on the optical stability of InP induced by atom layer deposition

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Iv-Vi Semiconductor Pbte(111) Surface

First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

Stable Structure And Effects Of Oxygen On Inn (1 0 (1)Over-Bar 0) And (1 1 (2)Over-Bar 0) Surfaces

InN growth on BaTiO3 (111) substrates: A first-principles study

Impact of in Situ NH3 Plasma Treatments on the Interface Between HfLaOx Thin Film and InP Substrate

Adsorption of Oxygen on K X C 60 Studied by Photoelectron Spectroscopy