Photoemission study of K on GaAs(100) and InP(100) surfaces with synchrotron radiation

P.S. Xu,E.D. Lu,S.H. Xu,X.J. Yu,H. Ji,Q. Liang,T.X. Zhao

DOI: https://doi.org/10.1016/0168-583X(95)00275-8

1995-01-01

Abstract:The adsorption of K on the n-type GaAs(100) and p-type InP(100) surfaces were investigated with core-level and valence-band photoemission using synchrotron radiation. The characteristics of both interfaces were similar to each other in many ways. It was found that the chemical reaction between the adsorbate K and the anions of the substrates were occurred with the K adsorption, and the interface reactants were K-As and K-P compounds, respectively. However, there was no chemical reaction between K and the cations of the substrate, but the cations could be exchanged by K atoms and segregated to the surfaces. From the data of band bending on K/GaAs(100) and K/InP(100), the Schottky barrier heights were about 0.72 eV and 0.75 eV, respectively. We believe that the Fermi-level pinning may be caused by half-filled sates rather than by defect levels. These states are formed by the outer-shell electrons of K atoms that fill the empty states of the dangling bonds of the surface cations exchanged by the K atoms.