Promoted oxidation of Rb on InP (100) surface

Pengshou Xu,Shihong Xu,Jingsheng Zhu,Xianming Liu,Maosheng Ma,Yuheng Zhang,ZhenJia Xu
1995-01-01
Abstract:The absorptive behavior of oxygen on Rb-covered and clean InP(100) surface was studied. The drastic enhancement of the oxidation of substrate was observed. The oxygen absorbed on the surface of Rb-covered InP (100) substrate can be oxidated, while the oxygen absorbed on clean InP (100) may be located under the Rb overlayer. With increasing the exposure of oxygen, the InP (100) surface may be located on indium atoms. When the substrate covered by Rb is annealed, a part of Rb may be desorbed from the substrate and the quantity of oxide phase corresponding to InPO4 increases.
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