Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

Effects of Growth Temperature on Al_xGa_(1-x)N Thin Films on Sapphire with High Al Contents

Effects of Growth Temperature on Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N Thin Films on Sapphire with High Al Contents: Effects of Growth Temperature on Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N Thin Films on Sapphire with High Al Contents

Effect of Growth Temperature of AlN Interlayers on the Properties of GaN Epilayers Grown on C‐plane Sapphire by Metal Organic Chemical Vapor Deposition

The Effects of Growth Temperature of the Pulse Atomic Layer Epitaxy AlN Films Grown on Sapphire by MOCVD

Comparative Study of Different Properties of GaN Films Grown on (0001) Sapphire Using High and Low Temperature AlN Interlayers

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Growth and Characteristics of Epitaxial Al X Ga 1− X N by MOCVD

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Effect of Growth Temperature on the Impurity Incorporation and Material Properties of N-Polar Gan Films Grown by Metal-Organic Chemical Vapor Deposition

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Structural and Optical Analyses of AlxGa1−xN Thin Films Grown by Metal Organic Chemical Vapor Deposition

Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

Effects of Growth Temperature on Structural and Electrical Properties of Inaln/Gan Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on C-Plane Sapphire

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Investigation of Non-doped GaN Grown on Sapphire Substrate

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl<sub>2</sub>O<sub>4</sub> substrates by pulsed laser deposition

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Influence of the Growth Temperature of the High-Temperature AlN Buffer on the Properties of GaN Grown on Si(1 1 1) Substrate