Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl<sub>2</sub>O<sub>4</sub> substrates by pulsed laser deposition

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Epitaxial growth of nonpolar GaN films on r -plane sapphire substrates by pulsed laser deposition

Quality-enhanced GaN Epitaxial Films Grown on (la, Sr) (al, Ta)O3 Substrates by Pulsed Laser Deposition

Epitaxial growth of GaN films on lattice-matched ScAlMgO4 substrates

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Room-Temperature Epitaxial Growth of Aln on Atomically Flat Mgal2o4 Substrates

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Effects of Growth Temperature on Properties of Nonpolar A-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

Growth of Wurtzite GaN Films on Α-Al2o3 Substrates Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Effect of Growth Temperature of AlN Interlayers on the Properties of GaN Epilayers Grown on C‐plane Sapphire by Metal Organic Chemical Vapor Deposition

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

Growth and Characterization of In0.17al0.83n Thin Films on Lattice-Matched Gan by Molecular Beam Epitaxy

Growth of GaN films using light radiation heating metal chemical vapor deposition

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate