Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl<sub>2</sub>O<sub>4</sub> substrates by pulsed laser deposition

Epitaxial growth of GaN films on lattice-matched ScAlMgO4 substrates

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Quality-enhanced GaN Epitaxial Films Grown on (la, Sr) (al, Ta)O3 Substrates by Pulsed Laser Deposition

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Effect of Growth Temperature on the Impurity Incorporation and Material Properties of N-Polar Gan Films Grown by Metal-Organic Chemical Vapor Deposition

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Effect of Thickness on the Microstructure of GaN Films on Al2O3(0001) by Laser Molecular Beam Epitaxy

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Effects of Growth Temperature on Properties of Nonpolar A-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

Study on the Effects of Growth Rate on GaN Films Properties Grown by Plasma-Assisted Molecular Beam Epitaxy