Influence of Hole Injection Layer on the Performance of OLEDs

WEI Fu-xiang,FANG Liang,JIANG Xue-yin,ZHANG Zhi-lin

DOI: https://doi.org/10.3969/j.issn.1006-6268.2008.12.009

2008-01-01

Abstract:We investigated the influence of the hole injection layer on the performance of the OLED. Evidence shows that m-MTDATA exhibits a dense film structure and fine surface morphology, leading to easy hole migration and enhancing the efficiency of OLEDs.

What problem does this paper attempt to address?

Revealing the influence of hole injection material's molecular orientation on OLED's performance

Weiqi Zhang,Han Wang,Jingsheng Miao,Yanan Zhu,Muhammad Umair Ali,Ting Xu,Liang Zhao,Dongwei Zhang,Gufeng He,Hong Meng

DOI: https://doi.org/10.1016/j.orgel.2018.05.022

IF: 3.868

2018-01-01

Organic Electronics

Abstract:In this study, we introduced N,N′-bis(4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid di-imide (NDI-BOCF3) and N,N′-Bis(4- trifluoromethoxyphenyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI- POCF3) as hole injection layers (HILs) in organic light emitting diodes (OLEDs) and investigated the relationship between HIL's molecular orientation and the hole injection characteristics. NDI-BOCF3 and NDI-POCF3 have similar optical and electrochemical properties; however, it is quite surprising that both of these materials demonstrated totally different function when used as HILs in OLEDs. NDI-BOCF3 is observed to enhance the hole injection, in contrast, NDI-POCF3 hinders hole injection. X-ray Diffraction (XRD), Electrostatic Surface Potential (ESP) calculations and Ultraviolet Photoelectron Spectrometry (UPS) were applied to explore the mechanism of NDI-BOCF3 and NDI-POCF3 as HILs. By comparing molecular orientation and electrostatic potential distribution of these two materials, we identified that the change in anode's work function caused by different molecular orientation of HILs results in completely different hole injection properties.
The Optimization of Hole Injection Layer in Organic Light-Emitting Diodes

Xiaolin Xing,Ziye Wu,Yingying Sun,Yunlong Liu,Xiaochen Dong,Shuhong Li,Wenjun Wang

DOI: https://doi.org/10.3390/nano14020161

IF: 5.3

2024-01-11

Nanomaterials

Abstract:Organic light-emitting diodes (OLEDs) are widely recognized as the forefront technology for displays and lighting technology. Now, the global OLED market is nearly mature, driven by the rising demand for superior displays in smartphones. In recent years, numerous strategies have been introduced and demonstrated to optimize the hole injection layer to further enhance the efficiency of OLEDs. In this paper, different methods of optimizing the hole injection layer were elucidated, including using a suitable hole injection material to minimize the hole injection barrier and match the energy level with the emission layer, exploring new preparation methods to optimize the structure of hole injection layer, and so on. Meanwhile, this article can help people to understand the current research progress and the challenges still faced in relation to the hole injection layer in OLEDs, providing future research directions to enhance the properties of OLEDs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Low Operating-Voltage and High Power-Efficiency OLED Employing MoO3-doped CuPc As Hole Injection Layer

Linsen Li,Min Guan,Guohua Cao,Yiyang Li,Yiping Zeng

DOI: https://doi.org/10.1016/j.displa.2011.10.002

IF: 3.074

2011-01-01

Displays

Abstract:Effects of doping molybdenum oxide (MoO3) in copper phthalocyanine (CuPc) as hole injection layer in OLEDs are studied. A green OLED with structure of ITO/MoO3-doped CuPc/NPB/10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H-(1)-benzopyropyrano(6,7,8-ij) quinolizin-11-one (C545T): tris(8-hydroxyquinoline) aluminum (Alq(3))/Alq(3)/LiF/Al shows the driving voltage of 4.4 V. and power efficiency of 4.3 Im/W at luminance of 100 cd/m(2). The charge transfer complex between CuPc and MoO3 plays a decisive role in improving the performance of OLEDs. The AFM characterization shows that the doped film owns a better smooth surface, which is also in good agreement with the electrical performance of OLEDs. (C) 2011 Elsevier B.V. All rights reserved.
Influence of the hole transport layer on the performance of organic light-emitting diodes

Carsten Giebeler,Homer Antoniadis,Donal D. C. Bradley,Yasuhiko Shirota

DOI: https://doi.org/10.1063/1.369413

IF: 2.877

1999-01-01

Journal of Applied Physics

Abstract:We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J–V) and luminance–voltage (L–V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J–V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered.

physics, applied
Role of Hole Playing in Improving Performance of Organic Light-Emitting Devices with an Al2o3 Layer Inserted at the Cathode-Organic Interface

S. T. Zhang,Y. C. Zhou,J. M. Zhao,Y. Q. Zhan,Z. J. Wang,Y. Wu,X. M. Ding,X. Y. Hou

DOI: https://doi.org/10.1063/1.2220013

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The role of hole playing in improving electron injection in the presence of an Al2O3 layer at the organic-cathode interface is discussed. It is deduced that, according to the model of tunneling barrier reduction and the carrier transporting mechanism in organic light-emitting devices, electron injection will be enhanced only if holes are injected and accumulated at the organic-buffer interface. The validity of this analysis is well confirmed by experimental results. The observed abnormal characteristic of operating voltage varying with the Al2O3 layer thickness and the efficiency improvement are also well explained by the model.
Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode

Hong Xu,Hao Yan,Junmin Chen,Xiaopeng Zhang,Pengli Zhang,Hongyang Li,Hong Meng

DOI: https://doi.org/10.1021/acsami.4c11124

IF: 9.5

2024-09-27

ACS Applied Materials & Interfaces

Abstract:The ability to charge injection is a key factor in determining the performance of the organic light-emitting diode (OLED) devices. Improving the work function of the anode surface via interface modification, thus lowering the hole injection barrier, stands as a crucial strategy for enhancing the performance of the OLED device. Herein, we propose an innovative p-doping hole injection material, namely, PEGDT/TPF/PVDF that exhibits excellent performance in OLED devices with the value of maximum...

materials science, multidisciplinary,nanoscience & nanotechnology
Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

DanDan Zhang,Jing Feng,Hai Wang,Yu Bai,Qidai Chen,Shiyong Liu,Hongbo Sun

DOI: https://doi.org/10.1063/1.3279142

IF: 4

2009-01-01

Applied Physics Letters

Abstract:A 4,4('),4(')-tris(3-methylphenylphenylamino)triphenylamine thin film doped with Fe3O4 has been demonstrated an efficient p-type hole-injection layer (HIL) in organic light-emitting devices (OLEDs). The tris-(8-hydroxyquinoline) aluminum-based OLEDs with the p-type HIL exhibit a very low turn-on voltage of 2.4 V and a high luminance of 29 360 cd/m(2) at 8 V, while it is 3 V and 6005 cd/m(2), respectively, for the nondoped devices. The improvement in the device performance is clarified as arising from the improved hole injection and transport by the results of ultraviolet/visible/near-infrared absorption, x-ray photoelectron spectra and current density-voltage characteristics of hole-only devices.
Modification of the Hole Injection Barrier in Organic Light-Emitting Devices Studied by Ultraviolet Photoelectron Spectroscopy

XM Ding,LM Hung,LF Cheng,ZB Deng,XY Hou,CS Lee,ST Lee

DOI: https://doi.org/10.1063/1.126449

IF: 4

2000-01-01

Applied Physics Letters

Abstract:Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion.
Enhanced Hole Injection in Organic Light-Emitting Devices by Using Fe3O4 As an Anodic Buffer Layer

Dan-Dan Zhang,Jing Feng,Yue-Feng Liu,Yu-Qing Zhong,Yu Bai,Yu Jin,Guo-Hua Xie,Qin Xue,Yi Zhao,Shi-Yong Liu,Hong-Bo Sun

DOI: https://doi.org/10.1063/1.3148657

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer.
Influence of Different Hole Transport Layer on the Performance of Organic Light-Emitting Devices

Qing Li,Junsheng Yu,Qi Wang,Lu Li

DOI: https://doi.org/10.1117/12.2010718

2012-01-01

Abstract:Organic light-emitting device based on ITO/hole transport layer (HTL)/Alq(3)/Mg: Ag was fabricated. In order to study the effect of different HTL on turn-on voltage, luminance and luminance efficiency of the devices, three kinds of devices TPD, PVK and TPD: PVK as HTL, respectively were studied. Result shows that device using TPD: PVK as HTL has the highest performance, which is due to the combination of the advantages of both the low-molecular-weight material and polymer. Meanwhile, The temperature stability of doped device has improved significantly. Maximum luminance and luminance efficiency of doped device are 6122 cd/m(2), 2.33 lm/w, respectively.
Hole injection control of electron blocking layer for broad recombination zone and low-efficiency roll-off in phosphorescent organic light emitting device

Jinwoo Shin,Jun Yeob Lee

DOI: https://doi.org/10.1080/15980316.2023.2285732

2023-11-24

Journal of Information Display

Abstract:Organic Light-Emitting Diodes (OLEDs) require several organic layers, including carrier injection layers, charge transport layers, and light-emitting layers (EML). Recently, many panel companies have been using layers with a dual function of charge transport and blocking to simplify the layer structure. At the same time, efficient charge injection into the EML is required to improve the device characteristics. In particular, the hole injection properties are important in devices using phosphorescent emitters because it is a major factor in forming the broad recombination zone. This study reports the factors influencing the device performances using three OLEDs with different electron-blocking layers (EBL). By adjusting the EBL’s energy levels, it is possible to form a broad recombination zone and reduce hole accumulation and polaron-induced stress at the interface. In addition, the wide dispersion of exciton formation reduces the overcrowding of exciton which induces exciton quenching and relieves an efficiency roll-off at high luminance. Consequently, the external quantum efficiency of N-([1,1'-biphenyl]-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-11,11-dimethyl-11H-benzo[b]fluoren-3-amine with a relatively deep HOMO level is increased by more than 2% with a relaxed roll-off of 7% at 3000 cd/m2 and a device lifetime is increased fivefold compared to those of N-([1,1′-biphenyl]-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-11,11-dimethyl-11H-benzo[b]fluoren-2-amine with a relatively shallow HOMO level.

materials science, multidisciplinary
Controllable and efficient hole-injection layers with molybdenum oxide units by solution-processed procedure for OLEDs

Han Xiao,Basílio Alberto Rungo,Shirong Wang,Xianggao Li,Hongli Liu

DOI: https://doi.org/10.1016/j.orgel.2020.105868

IF: 3.868

2020-10-01

Organic Electronics

Abstract:Since the low work function of ITO, introducing hole injection layer (HIL) with controllable and efficient property is an effective way to improve the performance of organic light-emitting diodes (OLEDs). In this work, films, containing molybdenum oxide units by employing H2O2 treated ammonium phosphomolybdate (AMP) as precursors, are fabricated through solution-processed procedure. The hole injection property of the HILs can be modulated by the gap-state density, which is negatively correlated with the molar ratio of AMP/H2O2. Green fluorescent and phosphorescent OLEDs based on the HILs are endowed with reduced turn-on voltage from 3.4 to 2.5 V and 4.1 to 3.4 V, respectively. Furthermore, fluorescent OLEDs based on the HIL with AMP/H2O2 of 1:14 show a maximum current efficiency of 6.82 cd/A, 1.2-flod higher than that of PEDOT:PSS based devices. This method opens up a new path to obtain HIL with adjustable property in mild prepare condition for various electroluminescent devices.

materials science, multidisciplinary,physics, applied
Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Francesco Todescato,Raffaella Capelli,Franco Dinelli,Mauro Murgia,Nadia Camaioni,Mujie Yang,Michele Muccini

DOI: https://doi.org/10.1117/12.739483

2007-01-01

Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.
Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode

Chan Young Park,Byoungdeog Choi

DOI: https://doi.org/10.3390/nano11112869

2021-10-27

Abstract:A top emitting organic light-emitting diode (OLED) device with pure aluminum (Al) anode for high-resolution microdisplays was proposed and fabricated. The low work function of the Al anode, even with a native oxide formed on the Al anode surface, increases the energy barrier of the interface between the anode and hole injection layer, and has poor hole-injection properties, which causes the low efficiency of the device. To enhance the hole-injection characteristics of the Al anode, we applied hexaazatriphenylene hexacarbonitrile (HATCN) as the hole-injection layer material. The proposed OLED device with a pure Al anode and native oxide on the anode surface improved efficiency by up to 35 cd/A at 1000 nit, which is 78% of the level of normal OLEDs with indium tin oxide (ITO) anode.
Material design of hole transport materials capable of thick-film formation in organic light emitting diodes

Masaki Aonuma,Takahito Oyamada,Hiroyuki Sasabe,Tetsuzou Miki,Chihaya Adachi

DOI: https://doi.org/10.1063/1.2733627

IF: 4

2007-04-30

Applied Physics Letters

Abstract:In this study, the authors show an empirical guideline for designing hole transport materials (HTMs) that suppress rises in driving voltage even with a few hundred nanometer thick film in the organic light emitting diodes (OLEDs). In a device structure of indium tin oxide (110nm)/hole transport layer (HTL) (Xnm)∕4,4′-N,N′-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (10nm)/tris-(8-hydroxyquinoline)aluminum (Alq3) (50nm)∕MgAg (100nm)∕Ag (10nm), the authors compared electroluminescence characteristics of the OLEDs having a thin-film HTL (X=50nm) and a thick-film HTL (X=300nm) using 13 kinds of HTMs. They observed a closed correlation between suppression of the driving voltage and the HTMs’ thermal characteristics. Highly thermally stable HTMs resulted in a small increase in the driving voltage.

physics, applied
Inkjet Printing Multilayer OLEDs with High Efficiency Based on the Blurred Interface

Zhenzhen Du,Yakun Liu,Xing,Tong Lin,Lei Liu,Tao Chu,Liang Wang,Dongyu Zhang,Zheng Cui

DOI: https://doi.org/10.1088/1361-6463/ab86e1

2020-01-01

Journal of Physics D Applied Physics

Abstract:Inkjet printing technology is considered to be a next generation manufacturing method for organic light-emitting diodes (OLEDs) production because of its simplicity and low cost. However, the dissolution at interfaces in the printing process is still one of the great challenges that limits its progress. The present work utilized the dissolution phenomenon innovatively to generate blurred interface during inkjet printing of multi-layer OLEDs, where TAPC and TAPC:TPBi:Ir-complexes were employed as a hole transport layer (HTL) and emitting layer (EML) and both of them were dissolvable in butyl benzoate to form the HTL and EML inks. When they were printed sequentially, a blurred interface between HTL and EML was formed because of the dissolution phenomenon, which facilitated the exciton formation and charge balance in EML and improved the device performance. With this blurred interface, the maximum current efficiency of 9.8 cd A−1, the maximum power efficiency of 5.0 lm W−1, and the maximum external quantum efficiency of 3.0% were achieved in (fpbt)2Ir(acac) based OLEDs. In contrast, they were only 7.4 cd A−1, 3.9 lm W−1 and 2.2% in devices having a clear interface between HTL and EML.
Improving the Performance of Solution-processed OLED by High Triplet Energy Hole Transport Layer

Dengfeng Mei,Jun Hu,Ting Shi,Jinchuan Li,Hang Zhou

DOI: https://doi.org/10.1109/icet61945.2024.10672983

2024-01-01

Abstract:The single hole transport layer (HTL) device may have the problem of energy level mismatch or the low triplet energy of the HTL, which leads to the lower device lifetime and efficiency. This paper presents a dual hole transport layer (HTL) strategy to improve the efficiency and lifetime of organic light emitting diodes (OLEDs) device. Not only could guarantee the device hole injection, but also can suppress the exciton quenching at the interface of emission layer. Finally, the device efficiency and lifetime increasing is achieved. Compared to single HTL device, the efficiency and lifetime of dual-HTL device is increased by 16% and 21%.
Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices

郑代顺,张旭,钱可元

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.01.016

2005-01-01

Abstract:The green organic light-emitting device (OLED) ITO/PVK:TPD/Alq3/Al and blue OLED ITO/PVK:TPD/LiBq4/Alq3/Al are fabricated by spin and vacuum deposition. Influence of hole buffer layer CuPc on the properties of OLED is studied. The results show that for the green OLED, the electron current and brightness are increased by the addition of CuPc, and the performance of the green OLED is enhanced. For the blue OLED, the addition of CuPc induces the imbalance injection of charge carriers, which deteriorates the properties of the blue OLED. This indicates that the effect of CuPc on the properties of different OLED is different. These results are explained with the energy level structure schematics of green and blue OLEDs.
Synergistic effects of Li-doped NiO film prepared by low-temperature combustion as hole-injection layer for high performance OLED devices

Mengdi Wang,Wenqing Zhu,Zhengyuan Yin,Lu Huang,Jun Li

DOI: https://doi.org/10.1016/j.orgel.2020.105823

IF: 3.868

2020-10-01

Organic Electronics

Abstract:The hole-injection layer (HIL) has vital impacts on the electroluminescence performance of organic light-emitting diodes (OLEDs). Herein, low-temperature solution-processed Li-doped nickel oxide (Li:NiOx) was fabricated as a novel HIL for OLEDs. As a result, the phosphorescent green OLED with 5% molar ratio Li:NiOx exhibits the best performance with low turn-on voltage of 3.1 V, maximum current efficiency of 55.8 cd A−1, maximum power efficiency of 57.2 lm·W−1 and maximum external quantum efficiency of 17.1%. While it is only 52.1 cd A−1, 50.9 lm·W−1 and for the reference device with undoped NiOx film, corresponding a 7%, 12% and 8% enhancement in efficiency respectively It reveals that the improved efficiency of the Li:NiOx film HIL based device with is mainly ascribed to the synergistic effect of extrinsic doping in the aspects of achieving enhanced hole injection. Our work demonstrates that the solution-processed Li-doped NiOx film is a promising HIL for high-performance OLEDs.
A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Han Zhang,Wenqing Zhu,Ming Wu,Zhiyin Feng,Lu Huang,Yipeng Chen,Yijie Dong,Yue Yang

DOI: https://doi.org/10.1016/j.optmat.2024.115509

IF: 3.754

2024-05-16

Optical Materials

Abstract:The development of high-performance organic light-emitting diodes (OLEDs) has become a current trend in the fields of display and lighting. However, the low hole-injection efficiency and consequent carrier imbalance seriously restrict the device performance of OLEDs. In this work, a solution-processable inorganic/organic bilayer composed of vanadium oxide (VO x )/poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) was reported as a hole-injection layer (HIL) in OLED to construct the matched interfacial energy level alignment that aimed at modifying hole-injection. This strategy not only facilitated the formation of a smooth PEDOT:PSS overlayer in the VO x /PEDOT:PSS bilayer, but also improved the hole-injection across the interface through the construction of step-wise energy level structure and hence enhanced carrier balance in device. Consequently, the device with VO x /PEODT:PSS bilayered HIL exhibited a maximum current efficiency of 67.23 cd A −1 and a maximum external quantum efficiency of 19.17 %, which were obviously superior to those of the reference devices with individual VO x HIL (54.85 cd A −1 and 15.58 %, respectively) and individual PEDOT:PSS HIL (58.74 cd A −1 and 16.84 %, respectively). Moreover, it was found that the stability of bilayered HIL-based device was improved substantially because the stable VO x layer effectively prevented the corrosion of indium tin oxide (ITO) anode by PEDOT:PSS. The study highlights a promising HIL for developing high-performance OLEDs.

materials science, multidisciplinary,optics

Influence of Hole Injection Layer on the Performance of OLEDs

Revealing the influence of hole injection material's molecular orientation on OLED's performance

The Optimization of Hole Injection Layer in Organic Light-Emitting Diodes

Low Operating-Voltage and High Power-Efficiency OLED Employing MoO3-doped CuPc As Hole Injection Layer

Influence of the hole transport layer on the performance of organic light-emitting diodes

Role of Hole Playing in Improving Performance of Organic Light-Emitting Devices with an Al2o3 Layer Inserted at the Cathode-Organic Interface

Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode

Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

Modification of the Hole Injection Barrier in Organic Light-Emitting Devices Studied by Ultraviolet Photoelectron Spectroscopy

Enhanced Hole Injection in Organic Light-Emitting Devices by Using Fe3O4 As an Anodic Buffer Layer

Influence of Different Hole Transport Layer on the Performance of Organic Light-Emitting Devices

Hole injection control of electron blocking layer for broad recombination zone and low-efficiency roll-off in phosphorescent organic light emitting device

Controllable and efficient hole-injection layers with molybdenum oxide units by solution-processed procedure for OLEDs

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode

Material design of hole transport materials capable of thick-film formation in organic light emitting diodes

Inkjet Printing Multilayer OLEDs with High Efficiency Based on the Blurred Interface

Improving the Performance of Solution-processed OLED by High Triplet Energy Hole Transport Layer

Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices

Synergistic effects of Li-doped NiO film prepared by low-temperature combustion as hole-injection layer for high performance OLED devices

A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes