Abstract:Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage profiles was studied by in-situ spectroscopic ellipsometry (SE) for the accurate tracking and evaluation of void and damage fractions in crystalline Ge during implantation of 200-keV Sb ions with a total fluence up to 1E16 cm-2 and an ion flux of 2.1E12 cm-2 s-1. The consecutive stages of damage accumulation were identified using optical multi-layer models with quantitative parameters of the thickness of modified layers as well as the volume fractions of amorphized material and voids. The effective size of damaged zones formed from ion tracks initiated by individual bombarding ions can be estimated by numerical simulation compared with the dynamics of damage profiles measured by ion beam analysis and ellipsometry. According to our observations, the formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of about 1E15 cm-2, leading to a high volume fraction of voids and a modified layer thickness of approx. 200 nm by the end of the irradiation process. This agrees with the results of numerical simulations and complementary scanning electron microscopy (SEM) measurements. In addition, we found a quasi-periodic time dependent behavior of amorphization and void formation represented by alternating accelerations and decelerations of different reorganization processes, respectively.

Structural Evolution in Ge+ Implantation Amorphous Si

Evolution of Structural Order in Germanium Ion-Implanted Amorphous Silicon Layers

Microstructure Evolution in He-Implanted Si at 600 C Followed by 1000 C Annealing

Evolution of secondary defects in arsenic implanted Si

The Structural Evolution of Light-Ion Implanted into GaAs Single Crystal after Annealing

Annealing behavior of Si1-xGex/Si heterostructure formed by Ge+ implantation with X-ray diffraction

Recrystallization Phase in He-Implanted 6H-SiC

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Investigation of Interface States Between GaAs and Si3N4 after He+ Implantation

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Structural Evolution of Ge-rich Si1−xGex Films Deposited by Jet-Icpcvd

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Hrem Examination of Er Ion-Implanted in Si

Research on Rapid Thermal Annealing of High Dose Ge+ Implantation into Silicon

Surface Morphology Of He-Implanted Single-Crystalline Silicon

Microstructural evolution upon annealing in Ar-implanted Si

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Study of surface morphology of helium implanted silicon

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Transmission Electron Microscopy and High-Resolution Electron Microscopy Studies of Structural Defects Induced in Si Single Crystals Implanted by Helium Ions at 600 °C