Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).

Research on Rapid Thermal Annealing of High Dose Ge+ Implantation into Silicon

Annealing behavior of Si1-xGex/Si heterostructure formed by Ge+ implantation with X-ray diffraction

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Rapid Thermal Annealing of Arsenic Implanted Si1−xGex Epilayers

Si Implantation in GaN at Elevated Temperatures

Rapid-thermal-anneal-based Internal Gettering for Germanium-Doped Czochralski Silicon

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

The Influence of Rapid Thermal Annealing on SiGe/SiMultiple-Quantum Wells p-i-n Photodiodes

Rapid thermal annealing of Pr3+ and Eu3+ implanted silicon

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing