Abstract:Microvia interconnection technology, which mainly includes blind via and buried via, has been put forward to meet the trends of ldquofaster, lighter, reliablerdquo in electronic industry. The technology plays a crucial role in the development of low cost and high density printed circuit board (PCB). However, as the cost for raw materials, like copper, keeps increasing, one defect blind via will lead to not only failure of the whole board but great economic loss as well. The defect causes and mechanisms have been diversified due to the complexity of process, which can be traced back to material property, microvia design, manufacturing process and service environment etc.. This paper focuses on systematic failure analysis of blind vias on PCB for novel mobile phones. A series of modern analytical instruments and methods were used to observe defects of the vias. Meanwhile, focused ion beam (FIB) was adopted, for the first time, both at home and abroad, to obtain the microstructure of copper grains in the cracking interface. Characterization techniques such as FT-IR, TGA and SAM were also performed to inspect thermal stability of the bare boards. The results have shown that obvious cracking occurring along the interface of different plating layers is the main cause of open circuit; and that both sulfur impurity on wall of the vias related to incomplete desmear process and inappropriate location of the vias concerned with circuit design predominantly account for blind vias cracking. It has been revealed that the reason of the cracking generation is concerned with the sulfur segregation and the formation of brittle CuxS (1lesxles2). Moreover, the influence of warpage on the reliability of the via has also been mentioned. Based on these defaults, improvement countermeasures and suggestions have been addressed in the paper, which are of significant value for reference to the safe reliability and structural integrity of PCB products during manufacturing and servic- - es.

Failure investigation on copper-plated blind vias in PCB

Failure Analysis on Blind Vias of PCB for Novel Mobile Phones

Analysis on cracking blind vias of PCB for mobile phones

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Failure Analysis on Cracking of Blind and Buried Vias of Printed Circuit Board for High-End Mobile Phones

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Pcb Related Failures in Electronic Assemblies

Feasibility Study of the Application of Voltage Contrast to Printed Circuit Board

Micro‐via Approaches for Reducing Solder Voiding

The Effect of Line Width on Stress-Induced Voiding in Cu Dual Damascene Interconnects

Effect of Copper Sulfate and Sulfuric Acid on Blind Hole Filling of HDI Circuit Boards by Electroplating

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Failure Analysis on Electrolytic Ni/Au Surface Finish of Pcb Used for Wire Bonding and Soldering

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

Reliable Design of Electroplated Copper Through Silicon Vias